Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs

Nonvolatile Ferroelectric Field-Effect Transistors.

Logic Compatible High-Performance Ferroelectric Transistor Memory

Ferroelectric HfO 2 Memory Transistors With High- κ Interfacial Layer and Write Endurance Exceeding 10 10 Cycles

An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Ferroelectric HfO$_2$ Memory Transistors with High-$κ$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

High-performance ferroelectric memory based on fully patterned tunnel junctions

Ferroelectric and Interlayer Co-optimization with In-depth Analysis for High Endurance FeFET

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges During Readout

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr 1- x O 2 /Interlayer/Si (MFIS) Gate Structure

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors

Investigation of Read Disturb for Hf0.5Zr0.5O2 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics