Polybenzoxazine/organosilicon composites with low dielectric constant and dielectric loss

Manlin Yuan,Xin Lu,Xiaoyun Ma,Hao Lin,Angui Lu,Liyan Shao,Zhong Xin
DOI: https://doi.org/10.1016/j.cjche.2023.06.024
IF: 3.8
2023-09-06
Chinese Journal of Chemical Engineering
Abstract:The evolution of electronic communication technology raises higher requirements for low dielectric constant (low- k ) materials. For this, a benzoxazine functional organosilicon (HP-aptes) with dense Si—O—Si crosslinking networks and large sterically hindered tert -butyl groups was prepared by the sol-gel method. Then, a series of polybenzoxazine composites (PPHP) were prepared from intrinsically low dielectric constant bis-functional benzoxazine monomer (P-aptmds) and HP-aptes. The double crosslinking networks of polybenzoxazine and organosilicon further increased the crosslinking density and decreased the dipole density of composites, which endowed the composites with enhanced low- k properties. When the content of HP-aptes is 30% (mass), the crosslinking density was 2.05×10 −3 mol·cm −3 , while that of PP-aptmds was 3.31×10 −3 mol·cm −3 . In addition, the dielectric constant and dielectric loss of PPHP composite at 1 MHz could reach 2.61 and 0.0056, respectively. Graphical abstract Download : Download high-res image (69KB) Download : Download full-size image
engineering, chemical
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