Double-decker Silsesquioxane-Doped Benzocyclobutene Functionalized Siloxane Polymer for Low K Materials

Jianhao He,Jing Cai,Shichang Tian,Yuanrong Cheng
DOI: https://doi.org/10.1109/icept59018.2023.10492402
2023-01-01
Abstract:Benzocyclobutene (BCB) resins have been widely used in the microelectronics industry because of their excellent thermal, mechanical, and low k properties. In our previous work, we have prepared a BCB functionalized silphenylenesiloxane resin with good thermostability (Td5 > 490 degrees C in nitrogen). However, the dielectric constant of this BCB resin exceeds 2.8 and is expected to decrease. Herein, a linear BCB functionalized polymer with a double-decker silsesquioxanes (DDSQ) doped silphenylene-siloxane backbone (DDSQ-PhBVSi) has been prepared using a Piers-Rubinsztajn reaction. It was cured at temperatures above 180 degrees C to obtain a thermoset. DDSQ with two reactive hydrosilyl groups is considered as a potential monomer to decrease the dielectric constant. The BCB group is introduced as a post-curing group to improve thermal and mechanical properties. Owing to the DDSQ units and the highly cross-linked structure, the thermoset exhibits a high initial storage modulus (>1.6 GPa at 25 degrees C) and good thermostability (Td5 > 495 degrees C in nitrogen). In addition, it exhibits good dielectric properties with a low k (2.69) and a low dissipation factor (<0.001) at 1 MHz.
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