Polyhedral Oligomeric Silsesquioxane Nanocomposites Exhibiting Ultra-Low Dielectric Constants Through Poss Orientation Into Lamellar Structures

Ying-Ling Liu,Meng-Han Fangchiang
DOI: https://doi.org/10.1039/b900141g
2009-01-01
Journal of Materials Chemistry
Abstract:Polyhedral oligomeric silsesquioxane (POSS) nanocomposite, which is prepared from two liquid monomers and can be processed under the "spinning on'' process, exhibits an ultra-low dielectric constant (k) of 1.47. The ultra-low k value of the POSS nanocomposite material is attributed to the formation of a POSS lamellar structure. The nanocomposite material also shows good thermal stability, high glass transition temperature, and re-workable characteristics, warranting its high potential for uses in modern and future microelectronics.
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