Abstract:Efficient approach based on the photochemistry of benzophenone has been developed for the cross-linking of the polymer hole-transporting layer (HTL). The cross-linked poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4′-(N-(4-butylphenyl) (TFB) thin films showed high solvent stability, smooth surface morphology, and improved charge-carrier mobility. The solution-processed red, green, and blue (RGB) quantum dot light-emitting diodes (QLEDs) based on the cross-linked HTLs showed much better performances than the corresponding devices based on the pristine TFB HTLs. The spin-coated red QLEDs based on the cross-linked HTLs showed the maximum current efficiency (CE), the maximum power efficiency (PE), and the peak external quantum efficiency (EQE) of 32.3 cd A–1, 42.3 lm W–1, and 21.4%, respectively. The inkjet-printed red QLEDs with the cross-linked HTLs exhibited the CE, PE, and EQE of 26.5 cd A–1, 37.8 lm W–1, and 18.1%, respectively. The high-performance HTLs were obtained by significantly reducing the amount of cross-linking agents.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c17336?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c17336</a>.NMR and high-resolution mass spectra of the new compounds, TGA and DSC curves of polymers, operational lifetime study on the RGB QLED devices with different HTLs, UV–vis absorption spectra of the immersion experiments, cross-linking time and the solvent-resistant properties of thin films, performances of the RGB QLED devices with varying thicknesses of HTLs, EL performance of the full-color QLEDs with different HTLs, contact angles of the cross-linked TFB films, and UV–vis absorption and PL spectra of CdZnSe/ZnS core–shell QDs (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c17336/suppl_file/am0c17336_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Effect of PVK mixed TAPC as hole transport layers on device performance of red quantum-dot light-emitting diodes

Conjugated Polyelectrolytes as Efficient Hole Transport Layers in Perovskite Light-Emitting Diodes.

High efficiency quantum-dot light-emitting diodes enabled by boosting hole injection

Enhancing performance in blue quantum-dot light-emitting diodes by using a deep HOMO carbazol-phenyl-triazine small molecule blended hole transporting layer

Highly efficient blue quantum-dot light-emitting diodes based on the mixed composite of carbazole donor and triazine acceptor as hole transport layer

Polymeric Hole Transport Materials for Red CsPbI3 Perovskite Quantum-Dot Light-Emitting Diodes

Design of the Hole-Injection/Hole-Transport Interfaces for Stable Quantum-Dot Light-Emitting Diodes

High‐Performance Blue Quantum‐Dot Light‐Emitting Diodes by Alleviating Electron Trapping

Optimization of carrier transport layer: A simple but effective approach toward achieving high efficiency all-solution processed InP quantum dot light emitting diodes

Improving the Performance of Quantum Dot Light-Emitting Diodes by the Enrichment of a Fluorinated Component on Top of a Hole Transport Layer

Green Oled Based On Doped Tetra-Methylest& Of Perylene-3,4,9,10-Tetracarboxylicacid Emitter

83‐4: High‐Performance Inverted Green and Red InP Quantum‐dot Light Emitting Diodes with Robust ZnS Electron Transport Interlayer

Photocross-Linkable Hole Transport Materials for Inkjet-Printed High-Efficient Quantum Dot Light-Emitting Diodes

Single Conjugated Polymer with Four Stepwise HOMO Levels for Effective Hole Injection Across Large Barrier 1.4 Ev to Core–Shell Quantum Dot Layer for Electroluminescence in Inverted QLED

Doping bilayer hole-transport polymer strategy stabilizing solution-processed green quantum-dot light-emitting diodes

Charge Carrier Regulation for Efficient Blue Quantum-Dot Light-Emitting Diodes Via a High-Mobility Coplanar Cyclopentane[b]thiopyran Derivative

Using Thermally Crosslinkable Hole Transporting Layer to Improve Interface Characteristics for Perovskite CsPbBr3 Quantum-Dot Light-Emitting Diodes

High Luminance and Stability of Perovskite Quantum Dot Light-Emitting Diodes Via ZnBr2 Passivation and an Ultrathin Al2O3 Barrier with Improved Carrier Balance and Ion Diffusive Inhibition

High-Performance perovskite quantum dots light-emitting diodes with hole transport layer engineering and synergetic outcoupling enhancement

Efficient Deep‐Blue (465 nm) Perovskite Quantum Dot‐Based Light‐Emitting Diodes via Triphenylamine Derivative Tailored Hole Transport Engineering

Realization of Highly Efficient InP Quantum Dot Light‐Emitting Diodes through In‐Depth Investigation of Exciton‐Harvesting Layers