High‐Performance Blue Quantum‐Dot Light‐Emitting Diodes by Alleviating Electron Trapping

Fangfang Wang,Qingzhao Hua,Qingli Lin,Fengjuan Zhang,Fei Chen,Huimin Zhang,Xiaoxiang Zhu,Xulan Xue,Xiongping Xu,Huaibin Shen,Hanzhuang Zhang,Wenyu Ji

DOI: https://doi.org/10.1002/adom.202200319

IF: 9

2022-05-03

Advanced Optical Materials

Abstract:The electron traps in the poly‐N‐vinylcarbazole (PVK) polymer are demonstrated by displacement current measurement and theoretical calculation. To alleviate the quenching/trapping effect of PVK on the emissive layer, a ZnSe/ZnS quantum dot (QD) interlayer is inserted between QD emissive layer and PVK hole‐transport layer. As a result, high‐performance blue quantum‐dot light‐emitting diodes with the maximum external quantum efficiency of 20.6% are achieved. Currently, blue quantum‐dot light‐emitting diodes (QLEDs) remain the bottleneck limiting the development of QLED‐based applications. To achieve high‐performance blue QLEDs, poly‐N‐vinylcarbazole (PVK) is usually employed as the hole‐transport layer (HTL) to reduce the hole injection barrier. However, fabrication of efficient blue QLEDs with PVK HTL remains challenging and empirical/accidental. Here, it is demonstrated that PVK layer can trap electrons and hence resulting in low device efficiency. This is why the performance of blue QLEDs is highly dependent on the PVK batch received from the manufacturers. As an interlayer, ZnSe/ZnS quantum dots (QDs) are inserted between PVK and blue ZnCdSe/ZnS QD emitters. The resulted device presents an external quantum efficiency of 20.6% under 2920 cd m−2, enhanced by ≈35% compared with that of PVK‐alone device. The remarkable enhancement is owing to the QD interlayer that not only suppresses the electron trapping in PVK, increasing the probability of exciton recombination within the emissive layer, but also facilitates the hole injection, improving the charge balance in blue devices.

materials science, multidisciplinary,optics