Abstract:Quantum dot (QD) light-emitting diodes (LEDs) are ideal for large-panel displays because of their excellent efficiency, colour purity, reliability and cost-effective fabrication1–4. Intensive efforts have produced red-, green- and blue-emitting QD-LEDs with efficiencies of 20.5 per cent4, 21.0 per cent5 and 19.8 per cent6, respectively, but it is still desirable to improve the operating stability of the devices and to replace their toxic cadmium composition with a more environmentally benign alternative. The performance of indium phosphide (InP)-based materials and devices has remained far behind those of their Cd-containing counterparts. Here we present a synthetic method of preparing a uniform InP core and a highly symmetrical core/shell QD with a quantum yield of approximately 100 per cent. In particular, we add hydrofluoric acid to etch out the oxidative InP core surface during the growth of the initial ZnSe shell and then we enable high-temperature ZnSe growth at 340 degrees Celsius. The engineered shell thickness suppresses energy transfer and Auger recombination in order to maintain high luminescence efficiency, and the initial surface ligand is replaced with a shorter one for better charge injection. The optimized InP/ZnSe/ZnS QD-LEDs showed a theoretical maximum external quantum efficiency of 21.4 per cent, a maximum brightness of 100,000 candelas per square metre and an extremely long lifetime of a million hours at 100 candelas per square metre, representing a performance comparable to that of state-of-the-art Cd-containing QD-LEDs. These as-prepared InP-based QD-LEDs could soon be usable in commercial displays. A method of engineering efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes (QD-LEDs) has improved their performance to the level of state-of-the-art cadmium-containing QD-LEDs, removing the problem of the toxicity of cadmium in large-panel displays.

Realization of Highly Efficient InP Quantum Dot Light‐Emitting Diodes through In‐Depth Investigation of Exciton‐Harvesting Layers

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Phosphorescent Dye Sensitized Quantum‐Dot Light‐Emitting Diodes with 37% External Quantum Efficiency

High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility

83‐4: High‐Performance Inverted Green and Red InP Quantum‐dot Light Emitting Diodes with Robust ZnS Electron Transport Interlayer

23% power conversion efficiency light-emitting diodes using monolayer quantum dots

Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment

Highly Efficient Nondoped Green Organic Light-Emitting Diodes with Combination of High Photoluminescence and High Exciton Utilization

Ligand-Solvent Coordination Enables Comprehensive Trap Passivation for Efficient Near-Infrared Quantum Dot Light-Emitting Diodes

Boosting Efficiency and Stability of Green InP Quantum Dot Light-Emitting Diodes by Interface Dipole Modulation

Boosting Efficiency of InP Quantum Dots-Based Light-Emitting Diodes by an In-Doped ZnO Electron Transport Layer

Optimization of carrier transport layer: A simple but effective approach toward achieving high efficiency all-solution processed InP quantum dot light emitting diodes

High‐Efficiency Green InP Quantum Dot‐Based Electroluminescent Device Comprising Thick‐Shell Quantum Dots

High-performance green and blue quantum-dot light-emitting diodes with eliminated charge leakage

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Enhanced Performance of Quantum Dot-Based Light-Emitting Diodes with Gold Nanoparticle-Doped Hole Injection Layer

Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes

High efficiency quantum-dot light-emitting diodes enabled by boosting hole injection

High Performance InP‐based Quantum Dot Light‐Emitting Diodes via the Suppression of Field‐Enhanced Electron Delocalization

Highly efficient green InP-based quantum dot light-emitting diodes regulated by inner alloyed shell component

High-Performance perovskite quantum dots light-emitting diodes with hole transport layer engineering and synergetic outcoupling enhancement