Abstract:The exploration initiated by the discovery of the topological insulator (BixSb1−x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (Bi0.4Sb0.6)2Te3 (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.05, 0.075, and 0.1). High-quality crystalline of the Cr:BST thin films deposited on a c-plane sapphire substrate has been rigorously confirmed through reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM) analyses. The existence of a Cr dopant has been identified with a reduction in the lattice parameter of BST from 30.53 ± 0.05 to 30.06 ± 0.04 Å confirmed by X-ray diffraction, and the valence state of Cr verified by X-ray photoemission (XPS) at binding energies of ~573.1 and ~583.5 eV. Additionally, the influence of Cr doping on lattice vibration was qualitatively examined by Raman spectroscopy, revealing a blue shift in peaks with increased Cr concentration. Surface characteristics, crucial for the functionality of topological insulators, were explored via Atomic Force Microscopy (AFM), illustrating a sevenfold reduction in surface roughness as the Cr concentration increased from 0 to 0.1. The ferromagnetic properties of Cr:BST were examined by a superconducting quantum interference device (SQUID) with a magnetic field applied in out-of-plane and in-plane directions. The Cr:BST samples exhibited a Curie temperature (Tc) above 50 K, accompanied by increased magnetization and coercivity with increasing Cr doping levels. The introduction of the Cr dopant induces a transition from n-type ((Bi0.4Sb0.6)2Te3) to p-type (Cr:(Bi0.4Sb0.6)2Te3) carriers, demonstrating a remarkable suppression of carrier density up to one order of magnitude, concurrently enhancing carrier mobility up to a factor of 5. This pivotal outcome is poised to significantly influence the development of QAHE studies and spintronic applications.

Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM–EDS Using Registration and Cell Averaging Techniques

Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators.

Stabilizing the Fermi Level of Cr-Doped Magnetic Topological Insulators by Al Passivation

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Field-effect Modulation of Anomalous Hall Effect in Diluted Ferromagnetic Topological Insulator Epitaxial Films

Modulation of crystal and electronic structures in topological insulators by rare-earth doping

Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic doping

From Magnetically Doped Topological Insulator to the Quantum Anomalous Hall Effect

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Tuning the magnetism and band topology through antisite defects in Sb doped MnBi4Te7

Defect Energetics and Magnetic Properties of 3D-Transition-metal-doped Topological Crystalline Insulator SnTe

Quantum Corrections Crossover and Ferromagnetism in Magnetic Topological Insulators

Effect of Dilute Magnetism in a Topological Insulator

Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3

Ordering Mechanism and Quantum Anomalous Hall Effect of Magnetically Doped Topological Insulators

Magnetic and electrical transport study of the antiferromagnetic topological insulator Sn-doped MnBi 2 Te 4

Evolution of Dopant-Concentration-Induced Magnetic Exchange Interaction in Topological Insulator Thin Films

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi2Te4 and MnBi4Te7 by Defect Engineering and Chemical Doping

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

The modulation of magnetism and charge carrier in magnetic topological insulator MnBi4Te7 by Pb and Sb co-doping