Abstract:Topological insulators are exotic states of matter that show quantum-Hall-like behaviour in the absence of a magnetic field. Surface states in such systems are protected against scattering and are thought to provide an avenue for the realization of fault-tolerant quantum computing. Experiments now reveal the observation of such a topological state of matter in Bi2Se3, a naturally occurring stoichiometric material with a simple surface-state structure and a bulk energy gap larger than kBT at room temperature. Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects1,2,3,4,5,6,7. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks8,9,10,11,12,13,14,15. It has been proposed that a topological insulator2 with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation14. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi2Se3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi2Se3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

Topological Luttinger semimetallic phase accompanied with surface states realized in silicon

Electronic Structure Of The Si-Containing Topological Dirac Semimetal Caal2si2

Phase Diagrams and Topological Mixed Edge States in Silicene with Intrinsic and Extrinsic Rashba Effects

Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3

Designer Topological Insulators in Superlattices

Electronic structure of the Si-containing topological Dirac semimetal CaA l 2 S i 2

Electronic Structures and Surface States of the Topological Insulatorbi1−xsbx

Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface

Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

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Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Topological states in the noncentrosymmetric superconductors LaPtSi and LaPtGe

I 4/ mcm -Si 48 : An Ideal Topological Nodal-Line Semimetal

Topological semimetal phase in non-Hermitian Su-Schrieffer-Heeger model

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface

One-dimensional Topological Phase and Tunable Soliton States in Atomic Nanolines on Si(001) Surface

Delicate Topology of Luttinger Semimetal

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

Visualizing discrete Fermi surfaces and possible nodal-line to Weyl state evolution in ZrSiTe

Structural Modulation and BC8 Enrichment of Silicon via Dynamic Decompression