Abstract:4D‐STEM is used to spatially resolve the complex microstructure of a multiphase polycrystalline hafnium zirconium oxide thin film. The analysis reveals site‐specific phase composition, alignment of polar axis, and phase/domain boundaries in the film, demonstrating a characterization framework for robust future investigation of the effects of growth, fabrication, and design parameters. Ferroelectric hafnium zirconium oxide (HZO) holds promise for nextgeneration memory and transistors due to its superior scalability and seamless integration with complementary metal‐oxide‐semiconductor processing. A major challenge in developing this emerging ferroelectric material is the metastable nature of the non‐centrosymmetric polar phase responsible for ferroelectricity, resulting in a coexistence of both polar and non‐polar phases with uneven grain sizes and random orientations. Due to the structural similarity between the multiple phases and the nanoscale dimensions of the thin film devices, accurate measurement of phase‐specific information remains challenging. Here, the application of 4D scanning transmission electron microscopy is demonstrated with automated electron diffraction pattern indexing to analyze multiphase polycrystalline HZO thin films, enabling the characterization of crystallographic phase and orientation across large working areas on the order of hundreds of nanometers. This approach offers a powerful characterization framework to produce a quantitative and statistically robust analysis of the intricate structure of HZO films by uncovering phase composition, polarization axis alignment, and unique phase distribution within the HZO film. This study introduces a novel approach for analyzing ferroelectric HZO, facilitating reliable characterization of process‐structure‐property relationships imperative to accelerating the growth optimization, performance, and successful implementation of ferroelectric HZO in devices.

Ferroelectricity in Ultrathin HfO 2 -Based Films by Nanosecond Laser Annealing

Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealing

Low‐Temperature Nanosecond Laser Process of HZO‐IGZO FeFETs toward Monolithic 3D System on Chip Integration

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Non-centrosymmetric crystallization in ferroelectric hafnium zirconium oxide via photon-assisted defect modulation

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Ferroelectric and Antiferroelectric Phenomenon in Lanthanum Doped Hafnium Based Thin Films

Ultrafast Switching of Ferroelectric HfO2-ZrO2 under Low Voltage with Layered Structure

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Orientation Independent Growth of Uniform Ferroelectric Hf0.5Zr0.5O2 Thin Films on Silicon for High‐Density 3D Memory Applications

Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics

Nanoscale Investigation of the Effect of Annealing Temperature on the Polarization Switching Dynamics of Hf0.5Zr0.5O2 Thin Films

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Demonstration of 1 V Reliable FeRAM Operation: V c Engineering Using Quasi-Chirality of Hf 1- x Zr x O 2 in a Nanolaminate Structure

Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing

Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications