Influence of inhomogeneous doping on chemical bond properties, microstructure, and terahertz dielectric performances of LTCC-capable ZnNb2O6 systems

Zipeng Huang,Jianli Qiao,Wenxiao Jia,Lingxia Li
DOI: https://doi.org/10.1016/j.ceramint.2024.02.053
IF: 5.532
2024-02-01
Ceramics International
Abstract:ZnNb2-x V x/2O6-1.25x (x = 0.1, 0.2, 0.4, and 0.6) ceramics were synthesized using a conventional solid phase reaction technique. The terahertz dielectric performances of ZnNb2-x V x/2O6-1.25x (x = 0.1, 0.2, 0.4, and 0.6) ceramics have been investigated using Rietveld refinement, scanning electron microscopy, first principles, and terahertz time-domain spectroscopy. XRD and mapping data indicate that the replacement of Nb5+ ions with V5+ ions induces variations in inter-ion interactions. Combined analysis with scanning electron microscopy indicated that the authigenic low melting point phase (ZnV2O6) had a positive effect on the densification of the specimen (ZnNb1.8V0.1O5.75) at low temperatures. However, more low melting point phases (ZnV2O6 and Zn2V2O7) adversely affect the densification and terahertz dielectric performances of the specimens as the V5+ content increases. In addition, the dielectric constant of the specimen is mainly affected by the ionicity of the Nb–O bond, while the dielectric loss is jointly affected by the covalency of the Nb–O bond and the grain size. The developed materials are expected to be used in LTCC terahertz application due to the low sintering temperature (950 °C) and excellent dielectric performance (dielectric constant of ∼20 and dielectric loss of 0.02–0.04).
materials science, ceramics
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