Abstract:Nanocalorimetry study on 10−40 nm thick Ge2Sb2Te5 (GST) is conducted at a heating rate up to 1,000,000 K s−1 with negligible thermal lag. GST shows Arrhenius crystallization behavior with growth rate (CGV) consistent with that of actual phase‐change memory (PCM) cells. This addresses a 10‐year‐debate originated from the unexpected non‐Arrhenius kinetics measured by commercialized chip‐based calorimetry with CGV 103–105 higher than measured in PCM devices. Non‐volatile phase‐change memory (PCM) devices are based on phase‐change materials such as Ge2Sb2Te5 (GST). PCM requires critically high crystallization growth velocity (CGV) for nanosecond switching speeds, which makes its material‐level kinetics investigation inaccessible for most characterization methods and remains ambiguous. In this work, nanocalorimetry enters this "no‐man's land" with scanning rate up to 1 000 000 K s−1 (fastest heating rate among all reported calorimetric studies on GST) and smaller sample‐size (10–40 nm thick) typical of PCM devices. Viscosity of supercooled liquid GST (inferred from the crystallization kinetic) exhibits Arrhenius behavior up to 290 °C, indicating its low fragility nature and thus a fragile‐to‐strong crossover at ≈410 °C. Thin‐film GST crystallization is found to be a single‐step Arrhenius process dominated by growth of interfacial nuclei with activation energy of 2.36 ± 0.14 eV. Calculated CGV is consistent with that of actual PCM cells. This addresses a 10‐year‐debate originated from the unexpected non‐Arrhenius kinetics measured by commercialized chip‐based calorimetry, which reports CGV 103−105 higher than those measured using PCM cells. Negligible thermal lag (<1.5 K) and no delamination is observed in this work. Melting, solidification, and specific heat of GST are also measured and agree with conventional calorimetry of bulk samples.

Exploring "No Man's Land"—Arrhenius Crystallization of Thin‐Film Phase Change Material at 1 000 000 K s−1 via Nanocalorimetry

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Characterization of supercooled liquid Ge2Sb2Te5 and its crystallization by ultrafast-heating calorimetry

High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films

Crystallization kinetics of the phase change material GeSb6Te measured with dynamic transmission electron microscopy

Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry

Crystallization dynamics probed by transient resistance in phase change memory cells

Fragile‐to‐Strong Transition in Phase‐Change Material Ge3Sb6Te5

Unraveling the crystallization kinetics of the Ge 2 Sb 2 Te 5 phase change compound with a machine-learned interatomic potential

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Glass Transition of the Phase Change Material AIST and its Impact on Crystallization

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Unraveling the Crystallization Kinetics of the Ge$_2$Sb$_2$Te$_5$ Phase Change Compound with a Machine-Learned Interatomic Potential

Pressure-induced Reversible Amorphization and an Amorphous–amorphous Transition in Ge 2 Sb 2 Te 5 Phase-Change Memory Material

Conductive Atomic Force Microscopy (C-AFM) Observation of Conducting Nanofilaments Formation in GeSbTe Phase Change Materials

Multi-Physics Modeling Of Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys

Investigation of the Crystallization Kinetics of the Thin Films for the Phase Change Memory Application

Temperature-dependent phase separation during annealing of Ge 2 Sb 2 Te 5 thin films in vacuum

In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films