Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS 2 and WS 2

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Effect of Layer and Stacking Sequence in Simultaneously Grown 2H and 3R WS2 Atomic Layers

Controllable Growth of Monolayer MoS2by Chemical Vapor Deposition Via Close MoO2precursor for Electrical and Optical Applications

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation

Apparent Differences between Single Layer Molybdenum Disulfide Fabricated via Chemical Vapor Deposition and Exfoliation

Effects of CVD Growth Parameters on Global and Local Optical Properties of MoS$_2$ Monolayers

Understanding Substrate Effects on 2D MoS2 Growth: A Kinetic Monte Carlo Approach

High-Temperature In Situ Investigation of Chemical Vapor Deposition to Reveal Growth Mechanisms of Monolayer Molybdenum Disulfide

Atomically Resolved Observation of Continuous Interfaces between As-grown MoS2 Monolayer and WS2/MoS2 Heterobilayer on SiO2

Growth of wafer-scale MoS2 monolayer by magnetron sputtering.

Atomically Resolved Observation of Continuous Interfaces Between an As-Grown MoS2 Monolayer and a WS2/MoS2 Heterobilayer on SiO2

Analyzing Growth Kinematics and Fractal Dimensions of Molybdenum Disulfide Films

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Nano-size crystallites in Mo/Si multilayer optics

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Understanding Substrate Effects on Two-Dimensional MoS2 Growth: a Kinetic Monte Carlo Approach

Probing the Growth Mechanisms of Vertical-Stacked and Lateral-Grown MoS2 Few Layers

Substrate Effects on Growth of MoS2 Film by Laser Physical Vapor Deposition on Sapphire, Si and Graphene (on Cu)