Antiferromagnetic semiconductor nature inGeS2monolayer doped with Mn and Fe transition metals

On Vo Van,Huynh Thi Phuong Thuy,Jonathan Sanchez Guerrero,Hoat Do Minh

DOI: https://doi.org/10.1039/d4cp03570d

IF: 3.3

2024-12-14

Physical Chemistry Chemical Physics

Abstract:The absence of intrinsic magnetism in two-dimensional (2D) materials demands the functionalization as a necessity towards broadening their applications. In this work, doping with transition metals (Mn and Fe) is proposed to modify the electronic and magnetic properties of GeS2 monolayer. Pristine monolayer is an indirect gap semiconductor with energy gap of 0.73(1.47) eV computed by PBE(HSE06) functional. Significant magnetism with a total magnetic moment of 1.18 μB emerges in GeS2 monolayer upon creating a single Ge vacancy, which is produced mainly by six nearest neighboring S atoms. In this case, the monolayer is metallized with S-px,y states as responsible. Similarly, the magnetization of GeS2 monolayer is also achieved by doping with Mn and Fe atoms with total magnetic moments of 3.00 and 3.78 μB, respectively. The calculated band structures assert that the magnetic semiconductor nature with spin-up/spin-down gap of 0.72/0.53 eV is induced by Mn impurity, while doping with Fe atom leads to the monolayer metallization. Being surrounded by more electronegative S atoms, Mn and Fe impurities lose charge amounts of 1.19 and 1.11 e, respectively. Further investigations on spin coupling indicate the antiferromagnetic semiconductor nature in Mn- and Fe-doped systems, regardless the distance between impurities. Our results provide important insights into the effects of doping into GeS2 monolayer, which demonstrate that the doped systems hold promise for spintronic applications.

chemistry, physical,physics, atomic, molecular & chemical