Electric Field Tuning of Interlayer Coupling in Noncentrosymmetric 3R-MoS 2 with an Electric Double Layer Interface
Xi Zhang,Tongshuai Zhu,Junwei Huang,Qian Wang,Xin Cong,Xiangyu Bi,Ming Tang,Caorong Zhang,Ling Zhou,Dongqin Zhang,Tong Su,Xueting Dai,Kui Meng,Zeya Li,Caiyu Qiu,Wei-Wei Zhao,Ping-Heng Tan,Haijun Zhang,Hongtao Yuan
DOI: https://doi.org/10.1021/acsami.0c12165
2020-09-15
Abstract:Interlayer coupling in two-dimensional (2D) layered materials plays an important role in controlling their properties. 2H- and 3R-MoS<sub>2</sub> with different stacking orders and the resulting interlayer coupling have been recently discovered to have different band structures and a contrast behavior in valley physics. However, the role of carrier doping in interlayer coupling in 2D materials remains elusive. Here, based on the electric double layer interface, we demonstrated the experimental observation of carrier doping-enhanced interlayer coupling in 3R-MoS<sub>2</sub>. A remarkable tuning of interlayer Raman modes can be observed by changing the stacking sequence and carrier doping near their monolayer limit. The modulated interlayer vibration modes originated from the interlayer coupling show a doping-induced blue shift and are supposed to be associated with the interlayer coupling enhancement, which is further verified using our first-principles calculations. Such an electrical control of interlayer coupling of layered materials in an electrical gating geometry provides a new degree of freedom to modify the physical properties in 2D materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c12165?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c12165</a>.Resonance Raman spectra; comparison of the high-frequency Raman spectra; comparison of the low-frequency Raman modes; gate-dependent evolution of frequency difference; details of the peak position analysis; theoretical calculations of the deformation charge density; theoretical calculation details of the interlayer binding energy, interlayer distance, and phonon dispersion; partial charge density of 3R-MoS<sub>2</sub> from <i>E</i><sub>F</sub> to <i>E</i><sub>VBM</sub>; and comparison of experimental and calculated results of the Raman vibration modes (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c12165/suppl_file/am0c12165_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology