Raman‐Active Interlayer Phonons and Moiré Phonons in Twisted Thin‐Layer MoTe 2

Youxuan Wu,Shiyuan Wang,Chuoqi Chen,Cong Zhou,Kun Chen,Jian Zhou,Zhi Wang,Ya‐Qing Bie,Shaozhi Deng
DOI: https://doi.org/10.1002/adom.202301747
IF: 9
2023-11-10
Advanced Optical Materials
Abstract:Abstract A wide range of artificially twist‐stacked van der Waals materials offer versatile building blocks for quantum optoelectronic devices. Among these, twisted bilayer MoTe 2 has excellent optical properties in the near‐infrared range and can be integrated with silicon photonics. While recent studies mainly focus on the emission properties in twisted bilayer MoTe 2 , a comprehensive investigation of how Moiré superlattice affects phonon modes in twisted thin‐layer MoTe 2 remains unexplored. These phonon modes can serve as indicators of stacking configuration and interface uniformity. Here, a series of twisted bilayer and tetralayer MoTe 2 with precisely controlled twist angles ranging from 0° to 60° are prepared. Using polarization‐dependent low‐frequency Raman spectroscopy, the evolution of interlayer phonon modes at different twist angles is identified. Additionally, a range of acoustic phonon modes activated by Moiré potentials in both twisted bilayer MoTe 2 and twisted tetralayer MoTe 2 are observed and analyzed. The findings provide experimental evidence of the interlayer phonon coupling and Moiré phonons in MoTe 2 , offering insights for the future development of near‐infrared optoelectronic devices based on twisted thin‐layer MoTe 2 .
materials science, multidisciplinary,optics
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