Ti 3 C 2 O 2 MXene single-layer as a nanoscale transport device

Ünal Özden Akkuş,ERDEM BALCI,Savaş Berber
DOI: https://doi.org/10.1088/1402-4896/ad1f20
2024-01-18
Physica Scripta
Abstract:We considered Ti 3 C 2 O 2 MXene single-layers with stepped edges as a nanoscale field effect transistor (FET) device. Our model device contains stepped edges at the interface of Ti 3 C 2 O 2 and Ti 2 CO 2 segments, and a top gate. We suggest that Ti 2 CO 2 semiconducting device region can be obtained by etching the central part of a Ti 3 C 2 O 2 single-layer. We determined the device characteristic of the proposed device in non-equilibrium Green's function (NEGF) calculations and observed the transistor behavior. The current through the device is controllable by the total amount of accumulated charge on the gate electrode. Our findings should be applicable to a large number of MXenes: Starting from M 3 C 2 O 2 MXene single-layers, nanoscale FETs could be produced using conventional mask and etching lithography techniques.
physics, multidisciplinary
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