High Anti-interference Ti3C2Tx MXene Field-effect transistor-based Alkali Indicator.

Chengbin Liu,Xiaoyan Chen,Sibei Hao,Boyang Zong,Shun Mao
DOI: https://doi.org/10.1021/acsami.0c09921
2020-06-25
Abstract:MXenes, a group of emerging two-dimensional (2D) transition metal carbides or nitrides, attract wide interests due to their unique structures and properties. Their stability and applicability in different media especially in alkaline environment are directly associated with their potential applications and have yet been explored. Herein, a field-effect transistor (FET) is fabricated with single/double-layer Ti3C2Tx MXene. The Ti3C2Tx FET indicator shows fast (~1 second), sensitive and selective response to alkali. Moreover, the device can work even in a high-salinity (2 M NaCl) circumstance, suggesting its high anti-interference ability for alkali in high-ionic-strength environment. Using in-situ morphological image evolution study, it is demonstrated that the response signal results from alkali-induced denaturation of Ti3C2Tx nanosheets. The Ti3C2Tx-based alkali FET indicator and systematic evaluation on alkali-induced structure evolution of Ti3C2Tx provide essential insights for MXene-based FETs and future applications of MXene in alkaline environment.
Chemistry,Medicine,Engineering,Materials Science
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