Nanoengineering of MXene-Based Field-Effect Transistor Gas Sensors: Advancements in Next-Generation Electronic Devices

P. Baraneedharan,D. Shankari,A. Arulraj,Percy J. Sephra,R. V. Mangalaraja,Mohammad Khalid,P Baraneedharan,D Shankari,A Arulraj,Percy J Sephra,RV Mangalaraja
DOI: https://doi.org/10.1149/1945-7111/acfc2b
IF: 3.9
2023-09-23
Journal of The Electrochemical Society
Abstract:Two-dimensional materials have garnered significant attention in recent years due to their unique physical and chemical properties, making them promising candidates for advanced electronic technologies. Graphene, in particular, has shown extraordinary qualities with the potential for highly efficient and durable electronic devices, overcoming technological limitations associated with downsizing. However, the absence of a band gap in graphene's structure has led researchers to explore alternative materials for transistor applications. MXene and its derivatives were developed in response to this shift in emphasis as potential solutions for constructing electronic systems. Simple changes in surface termination, the introduction of metal ions, careful management of etching duration, and suitable surface functionalization can improve the characteristics of MXene, which are similar to those of graphene. These modifications result in the desired band structure, enabling advanced applications. This review provides an overview of the most recent advancements in MXene-based materials design, highlighting challenges and future prospects, specifically focusing on the efficient design of field-effect transistor (FET) gas sensing devices. The underlying goal is to familiarize the readers with the MXene in FET-based sensing applications and summarize recent development in this field to transition to next-generation electronic devices.
electrochemistry,materials science, coatings & films
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