Abstract:Different logic functions including binary "NOT", "XOR", "OR", "AND", and ternary "TOR" are achieved on a reprogrammable optoelectronic logic gate device based on a p‐AlGaN/n‐GaN‐nanowire photoelectrochemical (PEC)‐type photodetector which demonstrates bidirectional photoresponse. This is made possible by utilizing multiple programming inputs, including light intensity, bias voltage, electrolyte conditions, and the cocatalysts benefiting from the unique operating principle of PEC‐type photodetectors. The elementary electronic‐logic‐gates, performing basic logic functions using electric signals as input, act as a building block of modern digital circuits. Intriguingly, the optoelectronic‐logic‐gates (OLGs), composed of optical devices, are emerging as a new logic platform which enables faster and large‐capacity data transmission and processing by using photons as input. However, the strict operation principle of classic optical devices, for example, the unidirectional photoresponse of the photodetector, restricts the functional enrichment of OLGs. Herein, reprogrammable OLGs in a photoelectrochemical (PEC)‐environment are reported by employing gallium‐nitride semiconductor p–n nanowires as photoelectrodes where bidirectional photocurrent is achieved, leading to the demonstration of various binary OLGs including "NOT", "XOR", and "OR". Strikingly, thanks to the versatile tunability of PEC‐photoelectrodes, the logic function of these OLGs is switchable by simply adjusting programming inputs including light intensity, bias voltage, electrolyte condition, and the physicochemical properties of the nanowire surface. Most importantly, unique ternary OLGs, for example, ternary "OR" gates, can also be realized based on binary ones by just tuning their applied bias for higher logic complexity applications, without changing the device architecture. Such reprogrammable binary and ternary OLGs could provide a new avenue toward next‐generation logic circuits for fast computing and data‐processing in the future.

Optomechanical Switches and Logic Gate Functions Based on GaN-on-Sapphire Devices Integrated With PDMS Membranes

Phonon‐Assisted Electro‐Optical Switches and Logic Gates Based on Semiconductor Nanostructures

Electro-optical Logic Gates Based on Graphene–silicon Waveguides

Reprogrammable Binary and Ternary Optoelectronic Logic Gates Composed of Nanostructured GaN Photoelectrodes with Bipolar Photoresponse Characteristics

Reprogrammable Binary and Ternary Optoelectronic Logic Gates Using GaN P-N Nanowires As Photoelectrodes

Optoelectronic Neuromorphic Logic Memory Device Based on Ga2O3/MoS2 Van Der Waals Heterostructure with High Rectification and On/Off Ratios

All-optical switch and logic gates based on all-dielectric hybrid silicon-Ge2Sb2Te5 metamaterials

Photonic Switch and Not Logic Gate Based on the Hybrid Integration of A Gaasvcsel and A Gaas Miss

Piezotronic and Piezo-Phototronic Logic Computations Using Au Decorated ZnO Microwires

Dual-gate Silicon Carbide (sic) Lateral Nanoelectromechanical Switches

A Boolean OR Gate Implemented with an Optoelectronic Switching Memristor

High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator

Optoelectronic Dual-Synapse Based on Wafer-level GaN-on-Si Device Incorporating Embedded SiO2 Barrier Layers

All-in-one, All-Optical Logic Gates Using Liquid Metal Plasmon Nonlinearity

Integrated-Optic Switches for Phased-Array Applications Based on Electrostatic Actuation of Metallic Membranes

Design of Ultra-Compact and Multifunctional Optical Logic Gate Based on Sb2Se3-SOI Hybrid Platform

Optical Pulse Controlled All-Optical Logic Gates in SiGe/Si Multimode Interference

Nonvolatile Silicon Photonic MEMS Switch Based on Centrally-Clamped Stepped Bistable Mechanical Beams

Design And Analysis Of A New Type Mems Optical Switch

Light-Controlled Stateful Logic Operations Using Optoelectronic Switches Based On P-Si/Hfo2 Heterostructures

Printed on‐Chip Perovskite Heterostructure Arrays for Optical Switchable Logic Gates