Abstract:Photonic switches have attractive application prospects in optical communication data networks that require dynamic reconfiguration. Integrating optical switching devices with optical fiber, the most widely deployed photonic technology platform, can realize signal transmission and processing in practical applications. Here, we demonstrate the multilevel optical switching using the phase-change material Ge2Sb2Te5 (GST) integrated on a graded-index multimode fiber. This switching process works by exploiting the significant difference in extinction coefficient between the crystalline state and the amorphous state of the GST. Using GST to achieve the switch function, no external energy source is needed to maintain the existing state of the switch, and the device is nonvolatile. This multi-level optical switch is an all-fiber integrated device. We apply GST to the end facets of the graded-index multimode fiber by magnetron sputtering, which is a reflective structure. A pulsing scheme is used to control the optical propagation state of the optical modulation signal to realize the switching function. It can store up to 11 non-volatile reliable and repeatable levels encoded by the pump source laser with a wavelength of 1550 nm. At the same time, the switching process between states is on the order of hundreds of nanoseconds. The present experimental results demonstrate the feasibility of 11 multilevel states in the field of optical fibers commonly used in communications. It can be well coupled with the all-fiber terminal device. It also shows that the device is still applicable in the 1525 nm∼1610 nm broadband range, promising for designing future multilevel photonic switches and memory devices.

All-optical switch and logic gates based on all-dielectric hybrid silicon-Ge2Sb2Te5 metamaterials

All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

Electro-optical Logic Gates Based on Graphene–silicon Waveguides

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In2O3/GST Segmented Structures

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In<sub>2</sub>O<sub>3</sub>/GST Segmented Structures

Photonic crystal based on mott phase change material as all-optical bandgap switch and composite logic gate

Logic Operation and All-Optical Switch Characteristics of Graphene Surface Plasmons.

Electrically Controlled 1 × 2 Tunable Switch Using a Phase Change Material Embedded Silicon Microring.

Reconfigurable Dual-Channel All-Optical Logic Gate in a Silicon Waveguide Using Polarization Encoding.

Dynamic control of anapole states with phase-change alloys.

Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

Non-volatile Flexible-Grid Wavelength-Selective Switch Using Subwavelength-Grating-ge2sb2te5-assisted Silicon Microring Resonators

All-Optic Logical Operations Based on the Visible-Near Infrared Bipolar Optical Response

All-dielectric phase-change reconfigurable metasurface

Design of Ultra-Compact and Multifunctional Optical Logic Gate Based on Sb2Se3-SOI Hybrid Platform

Compact Non-Volatile Multilevel Sb$_2$Se$_3$ Electro-Optical Switching in the Mid-Infrared Group-IV-Photonics Platform

Design of Low Loss 1 × 1 and 1 × 2 Phase-Change Optical Switches with Different Crystalline Phases of Ge2Sb2Te5 Films

Multiphysics simulations of a cylindrical waveguide optical switch using phase change materials on silicon

Symmetric multiplexing 2×2 guideway optical switch based on phase change material

Hybrid silicon all-optical switching devices integrated with two-dimensional material

Two-color all-optical switching in Si-compatible epsilon-near-zero hyperbolic metamaterials