Abstract:Scanning electron microscope (SEM) metrology is critical in semiconductor manufacturing for patterning process quality assessment and monitoring. Besides feature width and feature-feature space dimension measurements from critical dimension SEM (CDSEM) images, visual inspection of SEM image also offers rich information on the quality of patterning. However, visual inspection alone leaves considerable room of ambiguity regarding patterning quality. To narrow the room of ambiguity and to obtain more statistically quantitative information on patterning quality, SEM-image contours are often extracted to serve such purposes. From contours, important information such as critical dimension and resist sidewall angle at any location can be estimated. Those geometrical information can be used for optical proximity correction (OPC) model verification and lithography hotspot detection, etc. Classical contour extraction algorithms based on local information have insufficient capability in dealing with noisy and low contrast images. To achieve reliable contours from noisy and low contrast images, information beyond local should be made use of as much as possible. In this regard, deep convolutional neural network (DCNN) has proven its great capability, as manifested in various computer vision tasks. Taking the full advantages of this maturing technology, we have designed a DCNN network and applied it to the task of extracting contours from noisy and low contrast SEM images. It turns out that the model is capable of separating the resist top and bottom contours reliably. In addition, the model does not generate false contours, it also can suppress the generation of broken contours when ambiguous area for contour extraction is small and non-detrimental. With advanced image alignment algorithm with sub-pixel accuracy, contours from different exposure fields of same process condition can be superposed to estimate process variation band, furthermore, stochastic effect induced edge placement variation statistics can easily be inferred from the extracted contours.

Convolutional Neural Network-Assisted Photoresist Formulation Discriminator Design of a Contact Layer for Electron Beam Lithography

Machine learning in electron beam lithography to boost photoresist formulation design for high-resolution patterning

Photolithography Using Lateral Surface of Nanofibers

Machine Learning Applied to Electron Beam Lithography to Accelerate Process Optimization of a Contact Hole Layer

Critical Dimension Prediction of Metal Oxide Nanoparticle Photoresists for Electron Beam Lithography Using a Recurrent Neural Network.

High Depth-of-Field Nanostructures by Rotational Near-Field Photolithography

CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Fast and Robust DCNN Based Lithography SEM Image Contour Extraction Models

Predicting the critical features of the chemically-amplified resist profile based on machine learning

Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist

Precompensation for Nonlinear Distortion in Thick Film Photolithography

Advanced lithography materials: From fundamentals to applications

Quantitative evaluation of residual resist in electron beam lithography based on scanning electron microscopy imaging and thresholding segmentation algorithm

Design and Optimization of Resist Film in Imprint Lithography Alignment Process

Physical model-based ArF photoresist formulation development

Data Efficient Lithography Modeling with Residual Neural Networks and Transfer Learning.

Study on Photoresist Transfer in Rotational Near-Field Photolithography Using Molecular Dynamics Simulation

Canny Algorithm Enabling Precise Offline Line Edge Roughness Acquisition in High-Resolution Lithography.

Optimal feature vector design for computational lithography

Data Efficient Lithography Modeling with Transfer Learning and Active Data Selection

Estimation of Resist Profile for Line/space Patterns Using Layer-Based Exposure Modeling in Electron-Beam Lithography