Rewritable Pressure-Driven n – p Conduction Switching in Marcasite-Type CrSb 2

Chen Li,Ke Liu,Shang Peng,Qi Feng,Dequan Jiang,Ting Wen,Hong Xiao,Binbin Yue,Yonggang Wang
DOI: https://doi.org/10.1021/acs.chemmater.2c03673
IF: 10.508
2023-01-30
Chemistry of Materials
Abstract:Temperature- or pressure-driven n–p conduction-type switching has been described as an emerging phenomenon for potential applications as transistors, switches, and memory devices. The key challenge in the development of such n–p conduction-type switching materials is to establish maneuverable and controllable methods to achieve easy convertibility and nonvolatility. Herein, we report the first example of rewritable pressure and temperature dual-controlled n–p conduction-type switching in marcasite-type CrSb2. At room temperature, CrSb2 exhibits an unexcepted pressure-driven n–p conductivity-type switching around 12 GPa accompanied by a marcasite-to-arsenopyrite structural transition and a semiconductor-to-metal transition. The dramatic conduction-type switching is irreversible after pressure releasing at room temperature but reversible by annealing at a relatively low temperature (>80 °C). Accordingly, a multicycle bistability switching process is established under the dual regulation of both pressure and temperature. The underlying structure–property mechanism is revealed by in situ/ex situ characterization and analyses of the atomic-level microstructure, local lattice distortion, and residual stress induced by compression. This demonstration provides a new platform for the rational design of rewritable temperature/pressure-responsive photoelectric conversion devices.
materials science, multidisciplinary,chemistry, physical
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