Pressure-tuned colossal magnetoresistance effect in n -type CdCr 2 Se 4

Bowen Zhang,Chuanchuan Gu,Chao An,Xuliang Chen,Yonghui Zhou,Ying Zhou,Zhaorong Yang
DOI: https://doi.org/10.1063/5.0049868
IF: 4
2021-06-28
Applied Physics Letters
Abstract:The <i>p</i>-type CdCr<sub>2</sub>Se<sub>4</sub> exhibits semiconducting conductivity while <i>n</i>-type CdCr<sub>2</sub>Se<sub>4</sub> displays a semiconductor–metal transition and a concomitant colossal magnetoresistance near the Curie temperature. Here, we investigate the pressure effect on the conductivity for both types of compounds. We show that the resistance of <i>p</i>-type sample decreases continuously upon compression, while the semiconducting behavior dominates up to 27.9 GPa. For the <i>n</i>-type sample, the semiconductor-metal transition is suppressed gradually with the increase in pressure; meanwhile, the magnetoresistance becomes less and less pronounced and is negligible at 9.2 GPa. Combined with <i>in situ</i> high-pressure magnetization, x-ray diffraction, and Raman spectra investigations, a ferromagnetic ground state is deduced in the pressurized <i>n</i>-type CdCr<sub>2</sub>Se<sub>4</sub> before the structural transition, which is in stark contrast to the pressure effect on <i>n</i>-type HgCr<sub>2</sub>Se<sub>4</sub>.
physics, applied
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