Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Chen Li,Ke Liu,Dequan Jiang,Ting Wen,En Chen,Yingying Ma,Binbin Yue,Shengqi Chu,Yonggang Wang

DOI: https://doi.org/10.1021/acs.chemmater.3c00791

IF: 10.508

2023-06-14

Chemistry of Materials

Abstract:Materials capable of switching in multiple states under external stimuli have garnered extensive attention in the field of memory devices and switches. The coupling of various switching properties is of paramount significance to the creation of multifunctional devices. Herein, we report the pressure-induced multiswitching behaviors of both the structural and physical properties in two chromium selenides, CrSe and Cr2Se3. Comprehensive high-pressure characterizations reveal the collaborative occurrence of pressure-induced structural phase transitions, spin-crossover, metallization, and n–p conduction-type switching in both compounds. Upon compression, Cr2Se3 demonstrates an unexpected increase in resistivity and band gap, which is associated with the disordering of the self-intercalation structure. Of particular interest is that due to the dimensional differences in crystal structures, the photoelectric properties of the two decompressed samples are inversely regulated after pressure treatment. Notably, the band gap of Cr2Se3 is pronouncedly broadened after decompression due to the partially irreversible disorder in the structure. These results demonstrate that pressure engineering can regulate the photoelectric properties of materials effectively and flexibly, serving as a potential foundation for fabricating innovative pressure-responsive multifunctional devices.

materials science, multidisciplinary,chemistry, physical

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the polymorphic switching behaviors of two chromium selenides (CrSe and Cr2Se3) under high - pressure conditions, especially how the structures and physical properties of these materials change with pressure. Specifically, the research focuses on the following aspects:

1. **Structural phase transition**: Through high - pressure experiments, the structural changes of CrSe and Cr2Se3 under different pressures were studied, including the transition from NiAs - type structure to MnP - type structure and the volume collapse phenomenon.

2. **Spin - Crossover (SCO)**: The transition of Cr2+ ions from high - spin state (HS) to low - spin state (LS) under high pressure was explored, and this transition may lead to a significant change in the volume of the material.

3. **Metallization**: The metallization processes of these two materials under high pressure, that is, the behavior of changing from semiconductors to metals, were studied.

4. **Conductive type switching**: The phenomenon of CrSe and Cr2Se3 changing from n - type conduction to p - type conduction under high pressure was observed.

5. **Photovoltaic performance adjustment**: The changes in the photovoltaic properties of these two materials after decompression after high - pressure treatment were analyzed, especially the reverse regulation in resistivity and photocurrent response.

Through these studies, the authors aim to reveal how high - pressure engineering can effectively and flexibly adjust the photovoltaic properties of materials, providing theoretical basis and technical support for the design of high - performance pressure - responsive multifunctional devices.