Abstract:Passivating contact solar cells have gradually become the mainstream cell technology due to their excellent performance, and further improving the conversion efficiency has become a focus of subsequent research. Typically, achieving excellent field-effect passivation and low contact resistivity in doped polycrystalline silicon (poly-Si) solar cells requires heavy phosphorus doping. However, this approach can lead to a predicament where excessive phosphorus diffuses into the Si substrate during annealing, causing recombination losses. To address this challenge, a tandem passivation contact structure incorporating an intrinsic amorphous silicon (a-Si ( i)) film within the passivation layers is introduced to retard the diffusion of phosphorus into the Si substrate. Comprehensive characterizations of the tandem structure were carried out to delve into the underlying mechanisms of films with the integrated a-Si ( i) layer, including simulations, surface microscopy, active dopants profiling, crystallographic structure, chemical bonding, elemental distribution, and electrical properties. Simulations revealed that the inserted intrinsic layer effectively counteracts the clustering of phosphorus atoms, leading to a more even distribution during crystal growth. Furthermore, active dopant profiles indicate the potential of the introduced a-Si ( i) layer to tailor the in-diffused dopant profile. Microscopy investigations revealed the occurrence of blistering when the a-Si ( i) thickness exceeds 30 nm. Passivation and contact performances of TOPCon solar cells were assessed as the a-Si ( i) thickness was varied. Notably, optimal electrical properties were achieved with 20 nm a-Si ( i) thickness. At this thickness, the implied open-circuit voltage ( iV) of the hydrogenated lifetime sample was promoted to more than 736.6 mV on the polished wafer, corresponding to the lowest single-side saturation current density ( J) of 4.3 fA/cm . In addition, a low contact resistivity of 1.4 mΩ·cm was achieved. Based on this tandem passivation contact structure, industrial-sized TOPCon solar cells were fabricated, giving an average efficiency of 23.83%, 0.25% higher than that of the baseline counterparts on the production line. The above results demonstrate the role of the a-Si ( i) film as a buffer layer, retarding the diffusion of phosphorus into the Si substrate and obtaining a better passivation effect. This enables us to further tailor the doping profile for high-efficiency solar cells. Our work thus highlights a promising strategy to improve the performance of TOPCon solar cells and showcases its potential for implementation in industrial manufacturing.

Ultrafast laser-annealing of hydrogenated amorphous silicon in tunnel oxide passivated contacts for high-efficiency n-type silicon solar cells

Carrier Injection and Annealing‐Enhanced Electrical Performance in Tunnel Oxide‐Passivated Contact Silicon Solar Cells

Thermal annealing effects on tunnel oxide passivated hole contacts for high-efficiency crystalline silicon solar cells

Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

A silicon oxide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 23%

Novel Tandem Passivated Contact Approach for High-Efficiency Industrial TOPCon Solar Cells

Development of TOPCon tunnel-IBC solar cells with screen-printed fire-through contacts by laser patterning

UV-Raman scattering of thin film Si with ultrathin silicon oxide tunnel contact for high efficiency crystal silicon solar cells

Quantum Transport across Amorphous-Crystalline Interfaces in Tunnel Oxide Passivated Contact Solar Cells: Direct versus Defect-Assisted Tunneling

Improved interface passivation by optimizing a polysilicon film under different hydrogen dilution in N-type TOPCon silicon solar cells

Progress of plated metallization for industrial bifacial TOPCon silicon solar cells

Silicon heterojunction back contact solar cells by laser patterning

Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer

Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review

The differences between the hydrogenation by means of photon-injection and electron-injection for N-type tunnel oxide passivated contacts solar cells

Laser Crystallization and Dopant Activation for a-Si:H Film in Carrier-Selective Contacts for Silicon Solar cells

Unraveling the Passivation Mechanisms of C-Si/Siox/Poly-Si Contacts

Design and Optimization of SiOx/AZO Transparent Passivating Contacts for High‐Efficiency Crystalline Silicon Solar Cells

Effective Hydrogenation Strategies to Boost Efficiency over 20% for Crystalline Silicon Solar Cell with Al2O3/Cu2O Passivating Contact

Regionalizing Nitrogen Doping of Polysilicon Films Enabling High‐Efficiency Tunnel Oxide Passivating Contact Silicon Solar Cells