Abstract:The carrier transport through the silicon-oxide (SiOx) layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells has been studied experimentally and by simulation. The current intensity versus voltage (J-V) characteristics of GaIn/n-c-Si/SiOx/n+-poly-Si/Al structures shows a linear Ohmic characteristic, while a non-Ohmic behavior is observed in the samples without the n+-poly-Si contact layer. Conductive Atomic Force Microscopy (c-AFM) images reveal some current spikes on the surface of the samples, which could be related to the transport through pinholes. The simulation results show that 1) a rectification characteristic is obtained when only the tunneling mechanism is included, 2) both the reverse saturation current and the forward current increase when a small amount of transport through pinholes is introduced, and 3) finally a linear Ohmic behavior is observed when the pinhole transport component reaches a certain level. Furthermore, the simulation for whole TOPCon solar cells provides some useful results. For very thin SiOx (< 1.2 nm), the tunneling provides sufficient high tunneling probability and high efficiency TOPCon solar cells can be obtained without transport through pinholes if the passivation is ensured; while for a relatively thick SiOx (> 1.2 nm) without the transport through pinholes, the TOPCon solar cell shows a poor fill factor (FF) with a high series resistance (Rs) because the tunneling does not provide a sufficient high transport channel for carrier transport, and the introduction of a small number of transports through pinholes improves the FF and reduces the Rs, hence improves the PCE. However, a high possibility for carrier going through pinholes reduces all of the performance parameters and degrades PCE for all the cases simulated. Therefore, an optimized pinhole density and size distribution is critical engineering for solar cell performance optimization. However, the establishment of an optimized method to precisely control the pinhole formation and characterization is still on the way.

Carrier Injection and Annealing‐Enhanced Electrical Performance in Tunnel Oxide‐Passivated Contact Silicon Solar Cells

Study of hydrogenation with electron injection for TOPCon solar cells with different tunneling oxide layers

Ultrafast laser-annealing of hydrogenated amorphous silicon in tunnel oxide passivated contacts for high-efficiency n-type silicon solar cells

Theoretical exploration towards high-efficiency tunnel oxide passivated carrier-selective contacts (TOPCon) solar cells

Research on optimization of annealing process based on N-type TOPCon solar cell

Thermal annealing effects on tunnel oxide passivated hole contacts for high-efficiency crystalline silicon solar cells

The differences between the hydrogenation by means of photon-injection and electron-injection for N-type tunnel oxide passivated contacts solar cells

The Effect and Mechanism of Current Injection to Suppress Light and Elevated Temperature Induced Degradation in P-Type Cast-Mono and Multicrystalline Silicon Passivated Emitter and Rear Cells

Optimization of Rear Surface Morphology in N-Type TOPCon C-Si Solar Cells

Effect of annealing conditions on phosphorus inward diffusion from N + Poly-Si layer in N-type TOPCon solar cells

Prolonged Annealing Improves Hole Transport of Silicon Heterojunction Solar Cells

Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells

Improving the Performance of Industrial TOPCon Solar Cells Through the Insertion of Intrinsic A-Si Layer

Ultra-thin silicon oxide tunnel layer passivated contacts for screen-printed n-type industry solar cells

Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer

Current Injection‐induced Performance Enhancement in n‐type Silicon Heterojunction Solar Cells

Unraveling the Passivation Mechanisms of C-Si/Siox/Poly-Si Contacts

Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration

Passivation Improvement of Poly‐SiOx Based TOPCon Contacts by Thermal Annealing in a Water Vapor Atmosphere: Mechanism Exploration and Application Research