Atomistic study of shearing mechanism of nano-Ag joints and processing parameter optimization
Hengrui Li,Zhaoyang Qi,Guang Yang,Liguo Ding,Kewei Li,Fengshun Wu,Hao Huang
DOI: https://doi.org/10.1016/j.apsusc.2024.161757
IF: 6.7
2024-11-14
Applied Surface Science
Abstract:The wide band gap semiconductors (WBGs), such as silicon carbide (SiC) and gallium nitride (GaN), have been widely applied in high-performance electronics due to their ability to operate at high temperatures and high voltages. However, the reliability of traditional interconnection materials, such as tin-based solders, decreases under these high-temperature conditions. This study focuses on the atomistic mechanisms underlying the shearing process of nano-silver (Ag) joints and the optimization of their sintering parameters to enhance performance. Through molecular dynamics (MD) simulations, we have investigated the microstructural evolution during shear, highlighting the critical roles of dislocation dynamics and crystal transformations. The simulations have informed the design of sintering processes, which were subsequently validated through experimental thermal compression of micro-Ag paste. Our results indicate that sintering at 280 °C for 7 min under 8 MPa maximizes shear strength, increasing from 23.84 MPa to 44.49 MPa. These findings help develop robust and reliable Ag joints for advanced technological applications, offering valuable insights into optimizing sintering processes to enhance material performance.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films