Abstract:(111)-oriented nanotwinned Cu ((111)nt-Cu) has shown its high surface diffusion rate and better oxidation resistance over common polycrystalline Cu (C-Cu). The application of (111)nt-Cu as an interface metallization layer in Ag-sintered technology under the role of oxygen was investigated in this work, and its connecting behavior was further clarified by comparing it with C-Cu. As the sintering temperature decreasing from 300 to 200 °C, the shear strength on the (111)nt-Cu substrate was still greater than 55 MPa after sintering for 10 min. The fracture surface correspondingly changed from the interface of Ag/die to mixed fracture mode, involving the interface of the Ag/Cu substrate and Ag/die. The existence of copper oxide provided a tight connection between Ag and the (111)nt-Cu substrate at all of the studied temperatures. Although lots of small dispersed voids were seen at the interface between copper oxide and (111)nt-Cu at 300 °C, these impurity-induced voids would not necessarily be a failure position and could be improved by adjusting the sintering temperature and time; for example, 200 °C/10 min or heating to 300 °C, and then start cooling at the same time. The microstructure of Ag-Cu joint on (111)nt-Cu behaved better than that on C-Cu. The thinner copper oxide layer and the higher connection ratio of the interface between copper oxide and Ag were still found on the (111)nt-Cu connection's structure. The poor connection between copper oxide and Ag on C-Cu easily became the failure interface. By controlling the thickness of copper oxide and the content of impurity-induced voids, the use of (111)nt-Cu in advanced-packaging could be improved to a new level.

Interface Enhancing Strategy for Low-Temperature Bonding of Ag-based Nanoalloy

A Supersaturated Cu-Ag Nanoalloy Joint with Ultrahigh Shear Strength and Ultrafine Nanoprecipitates for Power Electronic Packaging

Sn-enhanced high-temperature reliability of Cu/Nano-Ag/Cu joint via transient-liquid-phase bonding

Bonding below 150°C Using Nano-Ag Film for Power Electronics Packaging

Sintering mechanism of Ag-Pd nanoalloy film for power electronic packaging

Low Temperature Bonding Process Using Mixed Cu-Ag Nanoparticles for Electronic Packaging

Sintering Mechanism of a Supersaturated Ag-Cu Nanoalloy Film for Power Electronic Packaging

Low temperature nanojoining of silver–copper nanopaste as die attach material for high temperature packaging

Low-Temperature Direct Bonding of Sputtered Nanocrystalline Ag Film for Power Electronic Packaging: Bonding Mechanism, Thermal Characteristics, and Reliability

Supersaturated Ag-Cu nanoalloy film for high reliability power electronic packaging

Interfacial Bonding Mechanisms of Sintered Cu Nanoparticles on Different Metallization Surfaces

Low Temperature Cu-Cu Bonding Using Ag Nanostructure for 3d Integration

Construction of Microstructures on the Cu Substrate Using Ultrafast Laser Processing to Enhance the Bonding Strength of Sintered Ag Nanoparticles

Thermal-stable Void-Free Interface Morphology and Bonding Mechanism of Low-Temperature Cu-Cu Bonding Using Ag Nanostructure As Intermediate

Improvement of Bondability by Depressing the Inhomogeneous Distribution of Nanoparticles in a Sintering Bonding Process with Silver Nanoparticles

Heterogeneous Bonding with Nanostructured Silver Langmuir-Blodgett Film

A Study on the Low Temperature Sintering-Bonding Through In-Situ Formation of Ag Nanoparticles Using Ag2o Microparticles

Low Temperature Sintering-Bonding Through In-Situ Formation of Ag Nanoparticles Using Micro-Scaled Ag_2O Composite Paste

Low temperature Au-Au bonding using Ag nanoparticles as intermediate for die attachment in power device packaging

Sintering mechanisms and mechanical properties of joints bonded using silver nanoparticles for electronic packaging applications

Bonding Behavior and Quality of Pressureless Ag Sintering on (111)-Oriented Nanotwinned Cu Substrate in Ambient Air