Abstract:Cerium (Ce) metal is commonly involved in fires due to its high activity in terms of chemical properties, posing a critical threat to equipment and human health. The oxidization, combustion and oxidization-to-combustion transition of cerium are complicated processes, and a full understanding of detailed evolution behaviors is lacking. A series of experiments are executed to study the oxidation-to-combustion process of cerium metal slices (CMSs) in an O2/Ar atmosphere of 0.3 mg/mL O2. Macroscopic features and micro-transformation behaviors of the physicochemical process are characterized using high-speed imaging, spectroscopy, XRD, AFM, SEM-EDX, and TGA. Results show that the evolution behaviors of CMS present three critical transitions, namely, the oxidation stage (OS), ignition and combustion stage (ICS) of heterogeneous reaction, and extinction stage (ES). The evolutions of CMS structure, oxide layer thickness, surface morphology and micro-zone composition at several key moments during the OS elucidate the transformation mechanism. The surface of CMS is firstly oxidized to Ce2O3 and then to CeO2, and these oxides experience their formation, grow, and gradually aggregate to form dense oxide layers. Fissures have been observed in the micro-morphology of the dense oxide layers at the initial ICS, implying that oxygen could diffuse through the fissures of the oxide layers and fiercely react with molten Ce inside during the ICS. The reactivities of Ce in OS and ICS are quantitatively evaluated with thermodynamic data. The qualitative and quantitative mechanism of the oxidization-to-combustion transition of Ce greatly contributes to the optimal design and safe operation of active metal equipment.

Investigation of concurrent flow of nitrogen and oxygen for the oxidation of cerium to cerium oxide films

Investigation of Growth, Structural and Optical Properties of CeO2 Nanocrystalline Thin Films Prepared by Pulsed Spray-Evaporation Chemical Vapor Deposition (PSE-CVD)

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Planar-dependent oxygen vacancy concentrations in photocatalytic CeO2 nanoparticles

Interfacial and Structural Characteristics of Ceo2 Films on Silicon with A Nitrided Interface Formed by Nitrogen-Ion-Beam Bombardment

AMORPHIZATION OF CERIUM MONONITRIDE DURING OXIDIZATION CHARACTERIZED BY OPTICAL MICROSCOPY, SCANNING ELECTRON MICROSCOPY, X-RAY DIFFRACTION AND X-RAY PHOTOELECTRON SPECTROSCOPY

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Dynamic Oxygen Storage Capacity Measurements on Ceria-Based Material

Experiments on Oxidation and Combustion Behaviors of Cerium Metal Slice with Slow Heating under O2/Ar Atmospheric Conditions

Electroluminescence from Metal-Oxide-semiconductor Devices with Erbium-Doped CeO2 Films on Silicon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

A Review on Potential Use of Cerium Oxide and Doped Cerium Oxide as High Dielectric Constant Seed Layers for Overgrowth of Cerium Oxide Nanostructures

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Bilayer gate dielectric of ZrO2 and Ho2O3 on 4H–SiC substrate: structural and electrical characterization

Synthesis and Characterization of Nanostructured Cerium-Doped Zinc Oxide Thin Films for Selective Nitrogen Dioxide Gas Sensing Applications

Investigation of Nonstoichiometry in Oxide Thin Films by Simultaneous in Situ Optical Absorption and Chemical Capacitance Measurements: Pr-Doped Ceria, A Case Study

Effects of Ni-Doping of Ceria-Based Materials on Their Micro-Structures and Dynamic Oxygen Storage and Release Behaviors

Structural and electrical properties of CeO2/Si with nitrided interfacial layer by nitrogen ion beam bombardment

Microstructure, optical and dielectric properties of cerium oxide thin films prepared by pulsed laser deposition

Growth of Gate Oxides on 4H–SiC by NO at Low Partial Pressures