2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

Junwei Chu,Yang Wang,Xuepeng Wang,Kai Hu,Gaofeng Rao,Chuanhui Gong,Chunchun Wu,Hao Hong,Xianfu Wang,Kaihui Liu,Chunlei Gao,Jie Xiong

DOI: https://doi.org/10.1002/adma.202004469

IF: 29.4

2020-12-16

Advanced Materials

Abstract:<p>The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices' application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the unique quantum behaviors exhibited by two - dimensional (2D) polar materials (including ferromagnetic, ferrovalley, ferroelectric materials and their related heterostructures) at the atomic scale, and to study how these polarization behaviors are closely related to the new degrees of freedom (DOFs) for next - generation information storage and processing. Specifically, the paper focuses on the following points:

1. **Introduction of basic concepts**: The paper first introduces the physical basis of polarization, including electronic polarization, magnetic polarization and valley polarization, as well as related characterization techniques. This provides a theoretical basis for understanding the complex phenomena in the subsequent discussions.

2. **Material synthesis and device construction**: The paper discusses in detail the synthesis methods of 2D polar materials, such as mechanical exfoliation, molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), and the applications of these materials in constructing spintronics, valleytronics and ferroelectronics devices.

3. **Physical mechanisms and modulation processes**: The paper deeply analyzes the physical mechanisms in these materials, especially the symmetry - breaking theory and the modulation processes through heterostructure engineering. For example, the paper discusses the exchange coupling in ferromagnetic materials, the spin - orbit coupling (SOC) in ferrovalley materials, and the structural distortion and electron correlation in ferroelectric materials.

4. **Interface effects**: The paper emphasizes the importance of interface effects when constructing 2D polar material heterostructures. These effects not only affect the performance of materials, but also provide new ways to modulate degrees of freedom. For example, by introducing an interface exchange field, the time - reversal symmetry can be broken and an ultra - high valley splitting can be achieved.

5. **Future prospects**: Finally, the paper looks forward to future research directions, including the development of potential material systems and new polar devices. These studies are expected to further enrich the understanding of 2D quantum systems and promote the practical applications of low - power, high - density integrated circuits.

In summary, this paper aims to provide researchers with guidance on the physical and material aspects of emerging 2D polar electronics, covering the whole process from material synthesis to device construction.