2D ferroelectrics and ferroelectrics with 2D: materials and device prospects

Chloe Leblanc,Seunguk Song,Deep Jariwala

2024-05-09

Abstract:Ferroelectric and two-dimensional materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental properties and high-value applications in computing, sensing etc. In this Perspective, we investigate the research topics where 2D semiconductors and ferroelectric materials both in 2D or 3D form come together. 2D semiconductors have unique attributes due to their van der Waals nature that permits their facile integration with any other electronic or optical materials. In addition, the emergence of ferroelectricity in 2D monolayers, multilayers, and artificial structures offers further advantages since traditionally ferroelectricity has been difficult to achieve in extremely thickness scaled materials. In this perspective, we elaborate on the applications of 2D materials + ferroelectricity in non-volatile memory devices highlighting their potential for in-memory computing, neuromorphic computing, optoelectronics, and spintronics. We also suggest the challenges posed by both ferroelectrics and 2D materials, including material/device preparation, and reliable characterizations to drive further investigations at the interface of these important classes of electronic materials.

Applied Physics,Materials Science

What problem does this paper attempt to address?

The paper mainly discusses the application prospects and challenges of two-dimensional (2D) ferroelectric materials in electronic devices. Due to their unique van der Waals properties and thin-layer structure, 2D ferroelectric materials can be easily integrated with other electronic or optical materials and exhibit ferroelectricity in single-layer or multi-layer forms, which is often difficult to achieve in very thin materials. These characteristics make the combination of 2D materials and ferroelectric materials promising in the fields of non-volatile memory devices, neuromorphic computing, optoelectronics, and spintronics.

The paper points out that although 2D ferroelectric materials such as In2Se3 and CuInP2S6 can store charges and switch polarization direction in a non-volatile manner at room temperature, they still face challenges in material preparation, reliable characterization, and interface dynamics. The combination of 2D materials and ferroelectric materials can be used to manufacture non-volatile transistors, memory devices, and photovoltaic devices, which are expected to solve the energy consumption, latency, and storage limitations in data-intensive computing.

In addition, the interaction at the interface between 2D materials and ferroelectric materials is crucial for device performance. Understanding the formation mechanism of 2D ferroelectric materials and the dynamics of 2D/ferroelectric interfaces will promote further research and innovation in this field. The paper also compares the characteristics of 2D and 3D ferroelectric materials, emphasizing the advantages of 2D materials in terms of bandgap diversity and thickness, as well as new opportunities in electronic device applications.

In conclusion, this paper aims to elucidate the basic principles, latest progress, and potential applications of 2D ferroelectric materials, encouraging further exploration in this rapidly developing field.