Effects of in-situ annealing on the electroluminescence performance of the Sn-based perovskite light-emitting diodes prepared by thermal evaporation

Haichuan Mu,Fan Hu,Ruibin Wang,Junlin Jia,Shuang Xiao

DOI: https://doi.org/10.1016/j.jlumin.2020.117493

IF: 3.6

2020-10-01

Journal of Luminescence

Abstract:<p>The Sn-based perovskite light-emitting diodes (PeLED) with the structure of (ITO)/MoO₃/4,4′-cyclohexylidenebis[N,N-bis(p-tolyl)aniline](TAPC)/4,4′,4′-Tris(carbazol-9-yl)-triphenylamine (TCTA)/perovskite/1,3,5-Tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB)/lithium fluoride(LiF)/Al were fabricated by thermal evaporation and in-situ annealing. The perovskite emitting layers were annealed at the various temperature of 50, 75 and 85 °C during the dual sources thermal evaporation of CsBr and SnBr₂ instead of routine post-synthetic annealing for the formation of crystalline CsSnBr₃ film. The effects of annealing temperature on the morphology, structure and photophysical properties of the CsSnBr₃ perovskite films as well as the electroluminescence(EL) performance of the PeLED were investigated. Little temperature dependence of perovskite emitting layers' morphology was found while obviously intensified absorbance, crystallinity and steady-state photoluminesce(PL) as well as apparently increased PL decay lifetime and slight red-shifted PL spectra of the CsSnBr₃ perovskite films upon increasing in-situ annealing temperature were demonstrated. The similar temperature dependent behavior of steady-state PL intensity, transient PL decay life time and photoluminescence quantum yield(PLQY) of all the CsSnBr₃ films verified that the hybrid effect of suppressed deep acceptor states and enhanced emitting from shallow trap states would be responsible for the PL behavior of in-situ annealed CsSnBr₃ films. In-situ annealing was also capable of extending carriers lifetime and reducing trap density, and leading to the occurrence of the suppressed "self-doping" of Sn⁴⁺ and reduction of acceptor states. Meanwhile, the improved crystal quality of the CsSnBr₃ nanocrystals should be closely related to the enhanced charge carriers dynamics and improved PL performance. The PeLED with 85 °C in-situ annealed CsSnBr₃ emitting layer demonstrated optimal EL performance with the current efficiency(CE) of 0.34 cd/A and external quantum efficiency(EQE) of 0.16%, which was consistent with the annealing temperature dependence of PL behavior of the CsSnBr₃ perovskite emitting layer and could be attributed to its superior PL performance, low trap density and high crystallinity.</p>

optics