Effects of Post-Annealing on the Property of CsPbBr3 Films and the Performance of Relevant Light-Emitting Diodes

Jianping Huang,Haitao Yao,Fangfang You,Yi Yao,Weiwei Li,Qing Zhang,Wenhua Zhang,Faqiang Xu
DOI: https://doi.org/10.1016/j.jlumin.2024.120771
IF: 3.6
2024-01-01
Journal of Luminescence
Abstract:All-inorganic metal halide perovskite materials have attracted considerable attention in display and lighting fields due to their excellent photoelectric properties. It has been found that post treatment, especially postannealing process generally plays crucial roles in promoting the crystal quality and properties of the perovskite films, as well as the performance of the relevant devices, but the promotion mechanism has not been reached thoroughly yet. Herein, we successfully synthesized the CsPbBr3 perovskite films through dual-source co-evaporation of CsBr and PbBr2 by applying the molecular beam epitaxy (MBE) technique in an ultrahigh vacuum system. The effects of post-annealing on the structure and optical property were systematically studied for the films, and the optimal post-annealing condition was determined to be 90 degrees C for 10 min. As the characterization results by SEM, XRD, PL, etc., shown, the optimizing effect is attributed to the size change and the quality enhancement of the CsPbBr3 microcrystals in the films with temperature. Using CsPbBr3 films as the emitting layers, the perovskite light-emitting diodes (PeLEDs) with the configuration of ITO/PVK/CsPbBr3/TPBi/ LiF/Al were constructed with the optimized emitting layer of 200 nm. The device shows pure green emission at a wavelength of 527 nm with a narrow full width at half-maximum of 19 nm. The post-annealing optimized device achieved an external quantum efficiency (EQE) of 1.6 % along with a maximum luminance of 39,700 cd/m2, which represents a significant improvement over the device consisting of unannealed CsPbBr3 film, with the EQE increased by 1.6 times and the luminance increased by 4.7 times.
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