Optical wireless communications with InGaN multiple-quantum-well photodiodes grown with the prestrained superlattice interlayer for light detection
Chia-Lung Tsai,Mukta Sharma,Yu-Li Hsieh,S.N. Manjunatha,Atanu Das,Cheng-Kai Xu,Hao-Tse Fu,Liann-Be Chang,Sun-Chien Ko
DOI: https://doi.org/10.1016/j.mssp.2023.108075
IF: 4.1
2023-12-22
Materials Science in Semiconductor Processing
Abstract:InGaN multiple-quantum-well photodiodes (InGaN MQW PDs) grown with an underlying superlattice (SL) are proposed for light detection in optical wireless communications . Experimentally, it was found that the presence of the prestrained SL interlayer with a reduced barrier width can help to relief the biaxial strain of the overlying In 0.16 Ga 0.84 N/GaN MQW. This gives rise to a stable emission spectrum and a reduced lifetime of carrier recombination or increased carrier escape from the InGaN wells in proposed InGaN PDs. The improved carrier transport in InGaN MQWs with a reduced polarization field is responsible for the improvement in PD's photoresponsivity provided their In 0.16 Ga 0.84 N/GaN MQW was fully depleted under −5 V bias. Further increasing the depletion width by reverse bias, an additional photocurrent from the prestrained SL interlayer leads to the best PD photoresponsivity despite their detectivity also degrading at such a high voltage level (V = −10 V). On the other hand, a 250 Mbit/s directed optical link with a bit error rate of 8.8 × 10 −8 is proven to be feasible by using the near-ultraviolet laser diode (LD) and the proposed InGaN PDs (better 3-dB cut-off frequency of 76.1 MHz achieved even under zero bias) as the optical transmitter and the receiver, respectively. Furthermore, the practical application of LD-based optical wireless communications with the SL containing InGaN PDs through real-time transmission of digital TV signals (data rate ∼ 270 Mbit/s) is also demonstrated.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied