Abstract:An In0.83Ga0.17As/InAs0.3P0.65Sb0.05 multiple quantum well (MQW) light emitting diode (LED) atop high‐quality n+‐InAsyP1‐y metamorphic buffers is developed to achieve short‐wave infrared emission surpassing 2 μm. The resulting InGaAs/InAsPSb MQW LED has superior emission properties, including a nearly constant emission wavelength with increased current injection, high external quantum efficiency, and low efficiency droop. Solid‐state infrared sources designed to emit wavelengths above 2 μm often face challenges in achieving high emission efficiency, minimizing power consumption, and reducing fabrication costs. In response, a 2.4 μm wavelength light emitting diode (LED) is developed using metamorphic In0.83Ga0.17As/InAs0.3P0.65Sb0.05 multiple quantum well (MQW) heterostructures. The substantial conduction (94 meV) and valence band offsets (300 meV) within this type‐I MQW LED architecture result in strong carrier confinement, improving electron and hole wavefunction overlap. Despite a notable lattice mismatch of 2.0% between the MQWs and InP substrate, the resulting LED wafer exhibits exceptionally low surface roughness (1.1 nm) and well‐defined, sharp interfaces within the heterostructures. Furthermore, this MQW LED exhibits favorable emission properties, including a low turn‐on field, minimal efficiency droop, and stable emission wavelength across varying injection currents. These advancements underscore the potential of such short‐wave infrared emitters for scalable applications in fields such as inspection, optical on‐chip communication, and biomedical diagnostics.

AlInGaAs Multiple Quantum Well-Integrated Device with Multifunction Light Emission/Detection and Electro-Optic Modulation in the Near-Infrared Range

AlInGaAs MQW Transceiver with Electro-optic Modulation Characteristics for Free-Space Optical Communication and Sensing

A High-resolution Colloidal Quantum Dot Imager by Monolithic Integration

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Simultaneous light emission and detection of InGaN/GaN multiple quantum well diodes for in-plane visible light communication on a chip

Membrane-type Photonic Integration of InGaN/GaN Multiple-Quantum-well Diodes and Waveguide

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Photonic integrated circuits fabricated using quantum well intermixing

Photonic-integrated circuits and components using quantum well intermixing

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Monolithically Integrated InP Photonic Micro Systems on a Chip for O-CDMA and OAWG Applications

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Monolithic Photonic Integration of Suspended Light Emitting Diode, Waveguide and Photodetector

40 GHz light source integrated with semiconductor laser and modulator based on AlGaInAs MQW material

UV Photonic Integrated Chip Based on Epitaxial III-N on Si for Short-Range On-Chip Data Transmission

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

Metamorphic InGaAs/InAsPSb Quantum Well Light Emitting Diodes for Operation in the Short‐Wave Infrared Region

Integration of MoS 2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Simultaneous Illumination-Imaging System

Coexistence of Light Emission and Detection in a III-nitride Quantum Well Diode.

Highly Responsive Switchable Broadband DUV-NIR Photodetector and Tunable Emitter Enabled by Uniform and Vertically Grown III-V Nanowire on Silicon Substrate for Integrated Photonics