Abstract:The study of renewable energy sources is currently an urgent problem. Such materials are produced by constructing phase diagrams or by cation–anionic substitution of an existing material. From this point of view, the formation of a solid solution (CdSe) 1– x (As 2 S 3 )x can be due to anionic substitution, which is capable of creating functional properties. In this regard, differential thermal analysis (DTA), X-ray diffraction (XRD), microstructural analysis (MSA), as well as measurements of microhardness and density were performed on solid solutions (CdSe) 1– x (As 2 S 3 ) x . The nature of the chemical interaction of CdSe with As 2 S 3 was studied and it was established that the introduction of As 2 S 3 into the composition of CdSe leads to the formation of solid solutions. Moreover, it has been found that solid solutions are formed up to 3 mol% concentration of As 2 S 3 . The temperature dependence of the electrical conductivity and thermo-EMF of (CdSe) 1– x (As 2 S 3 ) x (x = 0.01; 0.02; 0.03) solid solutions has been studied. It has been established that the obtained alloys of the solid solution (CdSe) 1– x (As 2 S 3 ) x (x = (x = 0.01; 0.02; 0.03) are semiconductors of medium resistance. When introducing high-resistance samples of 1; 2 and 3 mol. % As 2 S 3 into the composition of CdSe, the specific resistance of the alloys increases depending on the composition, and the conductivity decreases accordingly. For alloys of solid solutions (CdSe) 1– x (As 2 S 3 ) x , in the composition of 0.3; 0.6; 0.8 and 1.0 mol % As 2 S 3 , the spectral distribution of the photocurrent was studied. Samples containing 0.3; 0.6; 0.8 and 1.0 mol% As 2 S 3 are photosensitive materials capable of operating in the wavelength range of 0.4–1.1 μm.

Physical properties of AgAs3Se5, Ag2SnAs6Se12 (co-doped with Er3+, Nd3+) single crystals formed in the quasi-ternary system Ag2Se–SnSe2–As2Se3

GeAs_2: A Ⅳ-Ⅴ Group 2D Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

GeAs2: A IV–V Group Two-Dimensional Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

Enhanced Thermoelectric Properties of Cu2SnSe3-Based Materials with Ag2Se Addition

Structure and thermoelectric performance of AgyIn3.33-y/3Se5 compounds

Enhancement of Thermoelectric Performance of Layered SnSe2 by Synergistic Modulation of Carrier Concentration and Suppression of Lattice Thermal Conductivity

Structural transformation and thermoelectric performance in Ag2Te1−Se solid solution

Polycrystalline SnSe–Sn1–vS Solid Solutions: Vacancy Engineering and Nanostructuring Leading to High Thermoelectric Performance

Ag, Pb co-doped SnSe high performance thermoelectric materials

Syntheses of a series of BaCu 2− x Ag x Se 2 ( x = 0 – 1.0) selenides and evaluation of their thermoelectric properties

Investigation of electrophysical and photoelectric properties of solid solution alloys (CdSe)1–x(As2S3)x depending on composition

Crystal structure and thermoelectric properties of bulk polycrystalline (SbxBi1-x)2Se3 alloys

Ag-Se-Sn Phase Diagrams and Sn/Ag2Se Interfacial Reactions

First-principles investigation of InAgASe 4 (A = Ge, Sn) quaternary chalcogenides: Unveiling electronic, optical, and thermoelectric features

SYNTHESIS AND INVESTIGATION OF PHOTO- AND ELECTRICAL PROPERTIES OF GLASSY ALLOYS OF THE As3Se3-NdSe SYSTEM

Enhanced thermoelectric properties of p-type SnS0.2Se0.8 solid solution doped with Ag

p-type Sn0.98Ag0.02Se with low thermal conductivity synthesized by hydrothermal method

[O47] Phase equilibria of thermoelectric materials: Ag-Sb-Te and AgSbTe2-AgSbSe2

High thermoelectric properties in polycrystalline SnSe materials realized by rare earth halide Co-doping

Enhanced thermoelectric properties in Ag-rich AgSbSe2

High-Quality SnSe 2 Single Crystals: Electronic and Thermoelectric Properties