Nonvolatile Isomorphic Valence Transition in SmTe Films

Shogo Hatayama,Shunsuke Mori,Yuta Saito,Paul J. Fons,Yi Shuang,Yuji Sutou
DOI: https://doi.org/10.1021/acsnano.3c07960
IF: 17.1
2024-01-18
ACS Nano
Abstract:The burgeoning field of optoelectronic devices necessitates a mechanism that gives rise to a large contrast in the electrical and optical properties. A SmTe film with a NaCl-type structure demonstrates significant differences in resistivity (over 105) and band gap (approximately 1.45 eV) between as-deposited and annealed films, even in the absence of a structural transition. The change in the electronic structure and accompanying physical properties is attributed to a rigid-band shift triggered...
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
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