Abstract:This study explores the structural, electronic, elastic, and topological properties of MXY (M = Ti, Sn, Ir, X = Se, Te, Y = Se, Te) compounds. Findings reveal that IrXY compounds exhibit enhanced compression resistance and stiffness compared to TiXY and SnXY. While SnSe2 acts as a semiconductor, other compounds show metallic properties. TiSe2, IrSe2, and SnSeTe undergo band inversion at specific pressures. In this computational study, density functional theory (DFT) is employed to analyze the structural, electronic, elastic, and topological properties of ternary compounds MXY (M = Ti, Sn, Ir, X = Se, Te, Y = Se, Te). The effects of spin–orbit interaction and pressure‐induced strain are investigated to understand their influence on the stability, mechanical properties, and electronic behavior, paving the way for potential technological applications. The findings confirm that these compounds are inherently stable in nonmagnetic phases, with spin–orbit interaction critically influencing their energy–volume landscapes. The calculated lattice parameters, ratios of lattice constants, and bulk moduli closely align with existing data, confirming the reliability of our approach. Mechanical assessments reveal distinct behaviors: IrSe2 exhibits the highest stiffness due to pronounced covalent bonding, contrasting with SnTe2's elastic anisotropy and SnSeTe's nearly isotropic properties. Electronically, most compounds show metallic characteristics, except SnSe2, which behaves as a semiconductor with an indirect, pressure‐sensitive energy bandgap. Topological analysis under varying hydrostatic pressures indicates band inversions in TiSe2, IrSe2, and SnSeTe, suggesting topological phase transitions absent in other compounds. This study enriches our understanding of these materials and refines the application of DFT in material design.

Anisotropic strain in SmSe and SmTe: implications for electronic transport

Ultrahigh Electron Mobility Induced By Strain Engineering In Direct Semiconductor Monolayer Bi2tese2

Pressure-Dependent Light Emission of Charged and Neutral Excitons in Monolayer MoSe2

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

From Metals to Semiconductors: Advancing MXY (M = Ti, Sn, Ir, X = Se, Te, Y = Se, Te) Compounds with Strain Engineering—A Computational Perspective

Using strain to alter the energy bands of the monolayer MoSe2: A systematic study covering both tensile and compressive states

Anisotropic Raman Scattering and Mobility in Monolayer 1T D -Res 2 Controlled by Strain Engineering

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Transport behavior and thermoelectric properties of SnSe/SnS heterostructure modulated with asymmetric strain engineering

Strain-controlled switch between ferromagnetism and antiferromagnetism in 1T-CrX2 (X = Se, Te) monolayers

Strain-engineering the Anisotropic Electrical Conductance in ReS2 Monolayer

Tunable optoelectronic properties of two-dimensional PbSe by strain: First-principles study

Equibiaxial strain regulates the electronic structure, mechanical properties, piezoelectric, and thermal transport properties of the 2H-phase monolayer CrX2 (X=S, Se, Te)

Engineering the Near-Edge Electronic Structure of Snse Through Strains

First Principles Investigations of the Atomic, Electronic, and Thermoelectric Properties of Equilibrium and Strained Bi2Se3 & Bi2Te3, with van der Waals Interactions

Strain Controls Charge Carrier Lifetimes in Monolayer WSe2: Ab Initio Time Domain Analysis

Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2heterostructure

Nonvolatile Isomorphic Valence Transition in SmTe Films

Widely tunable and anisotropic charge carrier mobility in monolayer tin(II) selenide using biaxial strain: a first-principles study