Abstract:In the recent years, ferroelectricity in Hf0.5Zr0.5O2 (HZO) has been intensively studied due to its compatibility with silicon-based ferroelectric applications, high dielectric constant, and maintenance of robust ferroelectricity even at ultrathin thickness (<10 nm). This makes it a potential alternative material in ferroelectric field-effect transistors, complementary metal-oxide-semiconductor (CMOS) gate layers, and other applications. Previous studies have explained that ferroelectricity is attributed to the transformation from a tetragonal (t-phase) to orthorhombic (o-phase) structure during cooling. Conventional HZO thin films that are directly grown on silicon are polycrystalline, which reduces the polarization efficiency in CMOS devices. To address this problem, there is a demand for epitaxial freestanding HZO (FS-HZO) thin films that can be transferred without substrate constraints. In this study, we conducted comprehensive analysis of FS-HZO membranes with varying thicknesses to investigate the relationship between ferroelectric properties and thin film thickness. With monoclinic phase (m-phase) substitution, we notice a reduced o-phase fraction and gradual suppression of ferroelectricity when the thickness is over 20 nm. Owing to the large structure anisotropy, we further observed an increase in X-ray linear dichroism with increasing thickness. In addition, the dielectric constant of FS-HZO decreases by half compared to as-grown HZO due to increased leakage current from the cracks led by the freestanding process. This study presents an important method to combine oxides with silicon-based semiconductors and detailed information on various thicknesses of FS-HZO in aspects of structure and ferroelectricity, providing a potential solution to compatibility concerns in the context of next-generation nanoelectronics.

Introducing a Controlled Interfacial Layer to Enhance the Template Effect of ZrO2 in the ZrO2/HfO2/ZrO2 Structure

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Controlling the crystallinity of HfO2 thin film using the surface energy-driven phase stabilization and template effect

Towards an ideal high-κ HfO2-ZrO2-based dielectric

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Thickness Dependence of the Crystallization and Phase Transition in ZrO 2 Thin Films

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P$_r$ > 70$μ$C/cm$^2$) in Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films

Interface Effects Induced by a Zr O 2 Seed Layer on the Phase Stability and Orientation of Hf O 2 Ferroelectric Thin Films: A First-Principles Study

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Leveraging Crystallization Pathway to Control Structure in Hf0.5Zr0.5O2 Nanoparticles

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf 0.5 Zr 0.5 O 2 Films

A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Stabilization of thick, rhombohedral Hf 0.5 Zr 0.5 O 2 epilayer on c-plane ZnO

Electric-field-induced crystallization of Hf 0.5 Zr 0.5 O 2 thin film based on phase-field modeling

Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes