Abstract:Cs doped and Cs, S co‐doped CuI are high figure of merit p‐type transparent conductors. The local coordination around Cu is maintained with Cs doping of CuI as confirmed by XAS and TEM. Ionized impurity scattering and high Seebeck hole effective mass are the main hole mobility limiting mechanisms. The high conductivity, transmittance, and stability promise the applications in transparent electronics. One hindrance in transparent electronics is the lack of high‐performance p‐type transparent conductors (TCs). The state‐of‐the‐art p‐type TC, CuI, has a conductivity two orders of magnitude lower than n‐type TCs like ITO. While doping strategies have shown promise in enhancing the hole carrier density in CuI, they often come at the expense of hole mobility. Therefore, understanding how extrinsic dopants affect the mobility of CuI is critical to further improve the performance of CuI‐based TCs. Here the structural and electronic properties of Cs‐doped CuI are investigated. It is demonstrated that ≈4 at.% Cs doping in CuI increases the carrier density from 2.1 × 1019 to 3.8 × 1020 cm−3 while preserving the film microstructure and local coordination of Cu, as confirmed by HRTEM and XAS analysis. Introducing S as a co‐dopant in Cs:CuI boosts the carrier density to 8.2 × 1020 cm−3, reaching a stable conductivity of ≈450 S cm−1. In all cases, the enhanced carrier density negatively affects the hole mobility with ionized impurity scattering and increased Seebeck hole effective mass as mobility limiting mechanisms. Nonetheless, the new Cs, S co‐doped CuI exhibits high p‐type conductivity, Vis–NIR transparency, and stability, presenting an attractive candidate for future transparent electronic devices.

Transparent and conducting p-type (CuS) x :(ZnS) 1-x thin films produced by thermal Evaporation: An efficient broadband Si heterojunction photodiode

An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO2 and Al-doped ZnO heterojunction

Copper‐alloyed ZnS As a P‐type Transparent Conducting Material

Characterisation of p-type ZnS:Cu transparent conducting films fabricated by high-temperature pulsed laser deposition

High-Performance Semitransparent Photodiodes Based on Zinc Oxide/C60/Copper Phthalocyanine Double Heterojunction

Preparation and Photoconductive Properties of Vacuum-Sublimed Cupc/Zns Multilayer Films

High-performance photodetectors based on two-dimensional tin(II) sulfide (SnS) nanoflakes

Spraying-Deposited Transparent p-Type Sn-Doped CuI Film and Its Ultrahigh-Speed Self-Powered Photodetector

Cs‐Doped and Cs‐S Co‐Doped CuI p‐Type Transparent Semiconductors with Enhanced Conductivity

Synthesis and Characterization of Hydrazine Solution Processed Cu12Sb4S13 Film

Zn-Doped Cuals(2) Transparent P-Type Conductive Thin Films Deposited By Pulsed Plasma Deposition

P-Type Transparent Conductor: Zn-doped CuAlS2

Fabrication of enhanced performance Visible-light photodetector based on Ag/ZnS/p-Si/Ag heterojunction grown by chemical bath deposition

Solution‐Processed Transparent Sn4+‐Doped CuI Hybrid Photodetectors with Enhanced Performances

Study of temperature-dependent copper iodide thin film by thermal evaporation system

Fabrication of transparent p-CuI/n-ZnO heterojunction with excellent ideality factor

Flexible, Active P-typed Copper(i) Thiocyanate (P-Cuscn) Films As Self-Powered Photodetectors for Large-Scale Optoelectronic Systems

High-Performance Photodetectors with an Ultrahigh Photoswitching Ratio and a Very Fast Response Speed in Self-Powered Cu 2 ZnSnS 4 /CdS PN Heterojunctions

Growth and Properties of P-Type Zn-Doped CuAlS_2 Films

Cu-rich copper indium sulfide thin films deposited by co-evaporation for photovoltaic applications

Self-powered p-CuBr/n-Si heterojunction photodetector based on thermally evaporated high-quality CuBr films