Abstract:AbstractA thermomechanical model to describe the mechanisms of polishing pad scratching in chemical–mechanical planarization (CMP) has been formulated and investigated. CMP is a necessary process in integrated circuit (IC) fabrication to planarize wafers with nanoscale features after patterned layer deposition. Polishing pad asperities can produce microscale scratches on the wafer surface during CMP, reducing IC manufacturing yields. The constructed thermomechanical model accounts for stresses of the pad and wafer contact and also provides the means to track input energy dissipation during CMP. Tracking energy dissipation offers information about processes that may influence scratch production. This knowledge ultimately produces a greater physical understanding of CMP for the prevention of pad scratching. Polishing pad stress relaxation experiments demonstrate the importance of viscoelastic and plastic strain energy dissipation with its effects on the wafer stress field. Scratch producing ability of the polishing pad is found to decrease with use in CMP, with slurry soaking and increasing polishing time. Mechanical behavior of the polishing pad is demonstrated to differ when in compression and in tension. Compressibility of the pad material is shown to be significant in stress modeling through experimental measurement of polishing pad volume change. Differential scanning calorimetry of used polishing pad samples revealed energy dissipation into the polishing pad surface with increasing polishing time of CMP. Energy dissipation processes influence pad scratching in CMP. Analytical wafer stress field modeling unveils that the scratching ability of a polishing pad decreases when it is less stiff or has a smoother surface.

Experimental and Theoretical Investigation of Heating and Convection in Copper Polishing

Investigation of thermal effects in copper chemical mechanical polishing

Analytical Modelling of Material Removal in Copper Chemical Mechanical Polishing Incorporating the Scratch Hardness of the Passivated Layer on Copper Thin Film Wafer

A quantitative study of removal mechanism of copper polishing based on a single pad-asperity polishing test

Effects of the Polishing Variables on the Wafer-Pad Interfacial Fluid Pressure in Chemical Mechanical Polishing of 12-Inch Wafer

Copper chemical mechanical polishing using a slurry-free technique

Investigation for Material Removal Mechanism in Copper Chemical Mechanical Polishing with Quasi-Continuum Method

Thermal Modelling for Conformal Polishing in Inductively Coupled Atmospheric Pressure Plasma Processing

Experimental Investigation of Interfacial Thermal Conductance for Molten Metal Solidification on A Substrate

Chemical processes in the chemical mechanical polishing of copper

Ion polishing of copper: some observations

Research on Process Temperature During Chemical Mechanical Polishing of Stainless Steel Substrate

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Numerical Analysis of Hydrodynamic Process of Circular-Translational-moving Polishing (CTMP)

Chemical effects on the tribological behavior during copper chemical mechanical planarization

Experimental Investigation of Effective Thermal Conductivity for LHP Wicks

Material Removal and Surface Modification of Copper under Ultrasonic-Assisted Electrochemical Polishing

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Analysis on Pad Effects in Chemical Mechanical Polishing

Energy dissipation and constitutive modeling for a mechanistic description of pad scratching in chemical–mechanical planarization