Electrical 180° switching of Néel vector in spin-splitting antiferromagnet
Lei Han,Xizhi Fu,Rui Peng,Xingkai Cheng,Jiankun Dai,Liangyang Liu,Yidian Li,Yichi Zhang,Wenxuan Zhu,Hua Bai,Yongjian Zhou,Shixuan Liang,Chong Chen,Qian Wang,Xianzhe Chen,Luyi Yang,Yang Zhang,Cheng Song,Junwei Liu,Feng Pan
DOI: https://doi.org/10.1126/sciadv.adn0479
IF: 13.6
2024-01-27
Science Advances
Abstract:Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultradense and ultrafast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180° switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1." However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90° or 120° switching of Néel vector, which unavoidably require multiple writing channels that contradict ultradense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier and experimentally achieve electrical 180° switching of spin-splitting antiferromagnet Mn 5 Si 3 . Such a 180° switching is read out by the Néel vector–induced anomalous Hall effect. On the basis of our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high- and low-resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.
multidisciplinary sciences