Abstract:Applying strain to epitaxial thin films has proven to be an effective approach for controlling material properties, paving the way for "materials by design". In this study, we explore this concept in the context of topological Kagome antiferromagnets, which can exhibit a range of exotic magnetic states. One such material, Mn$_{3}$Sn, features a non-collinear yet coplanar inverse triangular spin order that lacks scalar spin chirality. By applying anisotropic strain to reduce the point group symmetry of the Kagome triangles from $C_{3v}$ to $C_{1}$, and utilizing the Dzyaloshinskii-Moriya interaction in epitaxial Mn$_{3}$Sn heterostructures, we achieve a canting of the manganese spins out of the Kagome plane. This newly induced magnetic state introduces a finite scalar spin chirality and results in a significant Berry phase in momentum space. Consequently, a large anomalous Hall effect emerges in the Kagome plane at room temperature, which can be fully controlled by charge current, enabling the realization of multiple-stable antiferromagnetic memory states.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to achieve the imprinting of scalar spin chirality by introducing anisotropic strain and in - plane Dzyaloshinskii - Moriya (DM) interaction in the Kagome antiferromagnetic material Mn₃Sn. Specifically, the authors explored how to change the point - group symmetry of the material through these means, thereby inducing non - zero scalar spin chirality and producing a significant Berry curvature effect, and finally observing a significant anomalous Hall effect (AHE) at room temperature. In addition, the paper also studied how to use electrical pulses to achieve thermally - assisted AHE switching, and then achieve multiple stable non - volatile anomalous Hall resistance (AHR) memory states. ### Main problems 1. **Imprinting of scalar spin chirality**: - How can non - zero scalar spin chirality be introduced in the Kagome antiferromagnetic material Mn₃Sn through anisotropic strain and in - plane DM interaction? - How does the introduction of this scalar spin chirality lead to a significant Berry curvature effect, so that a significant anomalous Hall effect can be observed at room temperature? 2. **Thermally - assisted AHE switching**: - How can thermally - assisted AHE switching be achieved through electrical pulses? - How does this switching mechanism allow the achievement of multiple stable non - volatile AHR memory states? ### Solutions - **Anisotropic strain**: By applying anisotropic strain on the Mn₃Sn thin film, the point - group symmetry of the Kagome triangle is reduced from $C_{3v}$ to $C_1$. - **In - plane DM interaction**: Utilize the in - plane DM interaction in the Mn₃Sn/Ta heterostructure to break the inversion symmetry and further stabilize the non - coplanar magnetic ground state. - **Electrical pulses and thermally - assisted switching**: Heat the material through electrical pulses so that its temperature exceeds the Néel temperature, achieving complete switching of AHE and forming different magnetic domain configurations, thereby achieving multiple stable AHR memory states. ### Experimental results - **Anomalous Hall effect**: A significant AHE was observed at room temperature, which was caused by non - zero scalar spin chirality and Berry curvature effect. - **Thermally - assisted switching**: Complete switching of AHE was achieved through electrical pulses, and this switching behavior is related to the amplitude of the current but not to the direction of the current. - **Multistate memory**: Multiple stable non - volatile AHR memory states were achieved, and these memory states have good stability against magnetic field fluctuations. ### Conclusions Through anisotropic strain and in - plane DM interaction, the imprinting of scalar spin chirality can be achieved in the Kagome antiferromagnetic material Mn₃Sn, thereby observing a significant AHE at room temperature. In addition, the thermally - assisted AHE switching achieved through electrical pulses can achieve multiple stable non - volatile AHR memory states, which provides new possibilities for spintronics and neuromorphic computing applications.

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