Strain-driven domain wall network with chiral junctions in an antiferromagnet

Vishesh Saxena,Mara Gutzeit,Arturo Rodríguez-Sota,Soumyajyoti Haldar,Felix Zahner,Roland Wiesendanger,André Kubetzka,Stefan Heinze,Kirsten von Bergmann

2024-08-23

Abstract:Materials with antiferromagnetic order have recently emerged as promising candidates in spintronics based on their beneficial characteristics such as vanishing stray fields and ultra-fast dynamics. At the same time more complex localized non-coplanar magnetic states as for instance skyrmions are in the focus of applications due to their intriguing properties such as the topological Hall effect. Recently a conceptual shift has occurred to envision the use of such magnetic defects not only in one-dimensional race track devices but to exploit their unique properties in two-dimensional networks. Here we use local strain in a collinear antiferromagnet to induce non-coplanar domain wall junctions, which connect in a very specific way to form extended networks. We combine spin-polarized scanning tunneling microscopy with density functional theory to characterize the different building blocks of the network, and unravel the origin of the handedness of triple-junctions and the size of the arising topological orbital moments.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to induce the formation of non - coplanar domain - wall networks in collinear antiferromagnetic materials through local strain, and study the topological properties of these networks and their potential applications in spintronics**.

Specifically, the authors focus on:

1. **Mechanisms for inducing non - coplanar domain - wall networks**:
- By introducing local strain (for example, the strain caused by Ar bubbles), complex non - coplanar domain - wall networks are generated in bilayer Mn films. This strain breaks the triple symmetry of the system, leading to the formation of specific types of domain - wall junctions (such as triple junctions and six - fold junctions).

2. **Characterizing the structure and magnetic properties of domain - wall networks**:
- Using spin - polarized scanning tunneling microscopy (SP - STM) and density - functional - theory (DFT) calculations, the building blocks of these networks, including the internal spin structures of domain walls and junctions, are studied in detail. In particular, they discovered the chiral strain field at triple junctions and the resulting topological orbital moment (TOM).

3. **Understanding the topological properties of non - coplanar magnetic structures**:
- Research shows that these non - coplanar magnetic structures (such as the 3Q state) have topological orbital moments, which may lead to a spontaneous topological Hall effect. These properties are very important for future spintronics device design.

4. **Exploring the influence of strain on antiferromagnetic materials**:
- Through a combination of experiment and theory, how strain affects the magnetic structure and energy state in antiferromagnetic materials is revealed. For example, it is found that the RW - AFM state will undergo atomic displacement under the action of strain, thereby reducing the total energy and stabilizing specific domain structures.

In summary, this paper aims to explore how to use local strain to create complex domain - wall networks in antiferromagnetic materials and conduct in - depth research on the topological magnetism of these networks and their potential application prospects. This provides an important theoretical and experimental basis for the development of new spintronics devices.