Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Chemical Etching of Screw Dislocated Transition Metal Dichalcogenides

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Titanium Self-Intercalation Induced Formation of Orthogonal (1 × 1) Edge/Surface Reconstruction in 1T-Tise2: Atomic Scale Dynamics and Mechanistic Study

Edge Reconstruction-Dependent Growth Kinetics of MoS2

Synergy Between Structure Characteristics and the Solution Chemistry in a Near/Non-Equilibrium Oxidative Etching of Penta-Twinned Palladium Nanorods

Complex and Noncentrosymmetric Stacking of Layered Metal Dichalcogenide Materials Created by Screw Dislocations.

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Chemically Derived Kirigami Of Wse2

Screw-Dislocation-Driven Growth of Two-Dimensional Few-Layer and Pyramid-Like WSe2 by Sulfur-Assisted Chemical Vapor Deposition

Morphological Control and Kinetics in Three Dimensions for Hierarchical Nanostructures Growth by Screw Dislocations

Anisotropic Etching of Monolayer MoS2 Flakes for Zigzag Edges in Chemical Vapor Deposition.

Local Strain‐Dependent Etching Patterns of Chemical Vapor Deposited Molybdenum Disulfide

Controlling Morphology and Excitonic Disorder in Monolayer WSe2 Grown by Salt-Assisted CVD Methods

Non-invasive digital etching of van der Waals semiconductors

Engineer in Situ Growth of Α-Al2o3 Whiskers by Axial Screw Dislocations

One-Dimensional Crystallographic Etching of Few-Layer WS$_2$

Terminal Atom‐Controlled Etching of 2D‐TMDs

Atomic process of oxidative etching in monolayer molybdenum disulfide

Growth-Etch Metal-Organic Chemical Vapor Deposition Approach of WS2 Atomic-Layers

A route towards the fabrication of 2D heterostructures using atomic layer etching combined with selective conversion