Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Anisotropic Etching of Monolayer MoS2 Flakes for Zigzag Edges in Chemical Vapor Deposition.

Edge Reconstruction-Dependent Growth Kinetics of MoS2

In-situ Fabrication of Mo 6 S 6 -Nanowire-terminated Edges in Monolayer Molybdenum Disulfide

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Self-feeding Formation of Atomically Thin Molybdenum Nanoflakes on MoS2 Monolayer

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Morphological Evolution of Monolayer MoS2 Single-Crystalline Flakes

Local Strain‐Dependent Etching Patterns of Chemical Vapor Deposited Molybdenum Disulfide

Impact of Polar Edge Terminations of the Transition Metal Dichalcogenide Monolayers During Vapor Growth

Atomic process of oxidative etching in monolayer molybdenum disulfide

Dendritic, Transferable, Strictly Monolayer MoS2 Flakes Synthesized on SrTiO3 Single Crystals for Efficient Electrocatalytic Applications

Edge Reconstruction-Dependent Growth Kinetics of MoS 2

Engineering the Edges of MoS2 (WS2) Crystals for Direct Exfoliation into Monolayers in Polar Micromolecular Solvents

Direct CVD-growth and optoelectronic characterizations of monolayer ribbon-like MoS 2 flakes

In-plane anisotropy in van der Waals epitaxial MoS 2 on MoO 2 (010)

Electrochemically Exfoliating MoS 2 into Atomically Thin Planar‐Stacking Through a Selective Lateral Reaction Pathway

Thickness-dependent Patterning of MoS2 Sheets with Well-Oriented Triangular Pits by Heating in Air

Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire

Abundant Catalytic Edge Sites in Few-Layer Horizontally Aligned MoS2 Nanosheets Grown by Space-Confined Chemical Vapor Deposition

Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals