Mid-infrared light-emitting properties and devices based on thin-film black phosphorus

Xinrong Zong,Kan Liao,Le Zhang,Chao Zhu,Xiaohong Jiang,Xiaolong Chen,Lin Wang

DOI: https://doi.org/10.1039/d0tc05384h

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:Mid-infrared (MIR) radiation has a wide range of applications in military, environmental monitoring, and medical treatment.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

Widely tunable mid-infrared light emission in thin-film black phosphorus

Chen Chen,Xiaobo Lu,Bingchen Deng,Xiaolong Chen,Qiushi Guo,Cheng Li,Chao Ma,Shaofan Yuan,Eric Sung,Kenji Watanabe,Takashi Taniguchi,Li Yang,Fengnian Xia

DOI: https://doi.org/10.1126/sciadv.aay6134

IF: 13.6

2020-02-14

Science Advances

Abstract:We report widely tunable mid-IR photoluminescence from 3.7 to 7.7 μm by an external electric field in thin-film black phosphorus.

multidisciplinary sciences
Black Phosphorus for Mid-Infrared Optoelectronics: Photophysics, Scalable Processing, and Device Applications

Naoki Higashitarumizu,Shu Wang,Shifan Wang,Hyungjin Kim,James Bullock,Ali Javey

DOI: https://doi.org/10.1021/acs.nanolett.4c04027

IF: 10.8

2024-10-16

Nano Letters

Abstract:High efficiency mid-infrared (λ = 3-8 μm) light emitters and photodetectors are pivotal for advancing next-generation optoelectronics. However, narrow-bandgap semiconductors face fundamental challenges such as pronounced nonradiative carrier recombination and thermally generated noise, which impede device performance. Recently, two-dimensional layered black phosphorus (BP) and its alloys have attracted substantial interest for mid-infrared device applications, demonstrating superior performance...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications

Xinrong Zong,Huamin Hu,Gang Ouyang,Jingwei Wang,Run Shi,Le Zhang,Qingsheng Zeng,Chao Zhu,Shouheng Chen,Chun Cheng,Bing Wang,Han Zhang,Zheng Liu,Wei Huang,Taihong Wang,Lin Wang,Xiaolong Chen

DOI: https://doi.org/10.1038/s41377-020-00356-x

2020-07-02

Light: Science and Applications

Abstract:Abstract Mid-infrared (MIR) light-emitting devices play a key role in optical communications, thermal imaging, and material analysis applications. Two-dimensional (2D) materials offer a promising direction for next-generation MIR devices owing to their exotic optical properties, as well as the ultimate thickness limit. More importantly, van der Waals heterostructures—combining the best of various 2D materials at an artificial atomic level—provide many new possibilities for constructing MIR light-emitting devices of large tuneability and high integration. Here, we introduce a simple but novel van der Waals heterostructure for MIR light-emission applications built from thin-film BP and transition metal dichalcogenides (TMDCs), in which BP acts as an MIR light-emission layer. For BP–WSe 2 heterostructures, an enhancement of ~200% in the photoluminescence intensities in the MIR region is observed, demonstrating highly efficient energy transfer in this heterostructure with type-I band alignment. For BP–MoS 2 heterostructures, a room temperature MIR light-emitting diode (LED) is enabled through the formation of a vertical PN heterojunction at the interface. Our work reveals that the BP–TMDC heterostructure with efficient light emission in the MIR range, either optically or electrically activated, provides a promising platform for infrared light property studies and applications.
Mid-infrared Black Phosphorus Surface-emitting Laser with an Open Micro-cavity

Yuanqing Huang,Jiqiang Ning,Hongmei Chen,Yijun Xu,Xu Wang,Xiaotian Ge,Cheng Jiang,Xing Zhang,Jianwei Zhang,Yong Peng,Zengli Huang,Yongqiang Ning,Kai Zhang,Ziyang Zhang

DOI: https://doi.org/10.1021/acsphotonics.9b00096

IF: 7

2019-01-01

ACS Photonics

Abstract:The compact and low-cost surface-emitting lasers in the 3-5 mu m mid-infrared (MIR) range are highly desirable for important applications such as gas detection, noninvasive medical diagnosis, and infrared scene projection. Due to the intrinsic noise of general narrow-bandgap semiconductors, the MIR is a challenging region for photonics. Here, we demonstrate the first black phosphorus (BP)-based MIR surface-emitting laser operating at room temperature fabricated with BP as the active gain materials embedded into a SiO2/Si3N4 open microcavity on silicon. Optically pumped lasing at similar to 3765 nm is successfully realized in the demonstrated device by significantly increased luminescence efficiency in the BP lamellar structure and resolving the general issues for processing BP and other two-dimensional materials as gain medium with the specific design of an open cavity. This is the first demonstration of a BP-based light-emitting device and thus paves a pathway toward monolithic integration of Si-photonics in the MIR range.
Zro2-Tio2 Thin Films and Resonators for Mid-Infrared Integrated Photonics

Feipeng Jiang,Ningyuan Duan,Hongtao Lin,Lan Li,Juejun Hu,Lei Bi,Haipeng Lu,Xiaolong Weng,Jianliang Xie,Longjiang Deng

DOI: https://doi.org/10.1117/12.2038415

2014-01-01

Abstract:We present a novel MIR transparent ZrO 2 -TiO 2 thin film material system deposited at room temperature. Micro disk resonator showing high quality factor at 5.2 μm wavelength is demonstrated, indicating their promising potential for integrated MIR photonic applications.
Wavelength-Tunable Mid-Infrared Lasing from Black Phosphorus Nanosheets

Yushuang Zhang,Shaowei Wang,Shula Chen,Qinglin Zhang,Xiao Wang,Xiaoli Zhu,Xuehong Zhang,Xing Xu,Tiefeng Yang,Mai He,Xin Yang,Ziwei Li,Xu Chen,Mingfei Wu,Yuerui Lu,Renmin Ma,Wei Lu,Anlian Pan

DOI: https://doi.org/10.1002/adma.201808319

IF: 29.4

2020-01-01

Advanced Materials

Abstract:Van der Waals layered semiconductor materials own unique physical properties and have attracted intense interest in developing high-performance electronic and photonic devices. Among them, black phosphorus (BP) is distinct for its layer number-tuned direct band gap which spans from near- to mid-infrared (MIR) waveband. In addition, the puckered honey comb crystal lattice endows the material with highly linear-polarized emission and marked anisotropy in carrier transportation. These unique material properties render BP as an intriguing and promising building block for constructing mid-infrared-ranged coherent light sources. Here, a room temperature surface-emitting MIR laser based on single crystalline BP nanosheets coupled with a distributed Bragg reflector cavity is reported. MIR stimulated emission at 3611 nm is achieved with a near-unity linear polarization, which exhibits robust thermal stability up to 360 K. Most importantly, the lasing wavelength can be tuned from 3425 to 4068 nm by varying the cavity length via thickness control of BP layer. The demonstrated highly polarized lasing output and wavelength-tunable capacity of the proposed device scheme in MIR spectral range opens up promising opportunities for a broad array of applications in polarization-resolved IR imaging, range-finding, and free space quantum communications.
Mid-infrared Waveguide Integrated Chalcogenide Glass on Black Phosphorus Photodetectors

Hongtao Lin,Skylar Deckoff-Jones,Derek Kita,Hanyu Zheng,Duanhui Li,Wei Zhang,Juejun Hu

DOI: https://doi.org/10.1364/cleo_si.2018.sm2i.8

2018-01-01

Abstract:The first mid-infrared waveguide integrated black phosphorus photodetector was fabricated and characterized with a responsivity of 40 mA/W at 2185 nm wavelength. (C) 2018 Optical Society of America
Black phosphorus van der Waals heterostructures light emitting diodes for mid-infrared silicon photonics

Tian-Yun Chang,Yueyang Chen,De-In Luo,Jia-Xin Li,Po-Liang Chen,Seokhyeong Lee,Zhuoran Fang,Wei-Qing Li,Ya-Yun Zhang,Mo Li,Arka Majumdar,Chang-Hua Liu

DOI: https://doi.org/10.48550/arXiv.2003.07757

2020-03-17

Applied Physics

Abstract:Light-emitting diodes (LEDs) based on III-V/II-VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications, including environmental monitoring, defense and medical diagnostics. Continued efforts are underway to realize on-chip sensors via heterogeneous integration of mid-IR emitters on a silicon photonic chip. But the uptake of such approach is limited by the high costs and interfacial strains, associated with the process of heterogeneous integrations. Here, the black phosphorus (BP)-based van der Waals (vdW) heterostructures are exploited as room temperature LEDs. The demonstrated devices can emit linearly polarized light, and their spectra cover the technologically important mid-IR atmospheric window (3-4 um). Additionally, the BP LEDs exhibit fast modulation speed as well as exceptional stability, and its peak extrinsic quantum efficiency (QE~0.9%) is comparable to the III-V/II-VI mid-IR LEDs. By leveraging the integrability of vdW heterostructures, we further demonstrate a silicon photonic waveguide-integrated BP LED. The reported hybrid platform holds great promise for mid-IR silicon photonics.
Bright Mid-Wave Infrared Resonant-Cavity Light-Emitting Diodes Based on Black Phosphorus

Niharika Gupta,Hyungjin Kim,Nima Sefidmooye Azar,Shiekh Zia Uddin,Der-Hsien Lien,Kenneth B Crozier,Ali Javey

DOI: https://doi.org/10.1021/acs.nanolett.1c04557

2022-02-09

Abstract:The mid-wave infrared (MWIR) wavelength range plays a central role in a variety of applications, including optical gas sensing, industrial process control, spectroscopy, and infrared (IR) countermeasures. Among the MWIR light sources, light-emitting diodes (LEDs) have the advantages of simple design, room-temperature operation, and low cost. Owing to the low Auger recombination at high carrier densities and direct bandgap of black phosphorus (bP), it can serve as a high quantum efficiency emitting layer in LEDs. In this work, we demonstrate bP-LEDs exhibiting high external quantum efficiencies and wall-plug efficiencies of up to 4.43 and 1.78%, respectively. This is achieved by integrating the device with an Al2O3/Au optical cavity, which enhances the emission efficiency, and a thin transparent conducing oxide [indium tin oxide (ITO)] layer, which reduces the parasitic resistance, both resulting in order of magnitude improvements to performance.
Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends

Rui Cao,Sidi Fan,Peng Yin,Chunyang Ma,Yonghong Zeng,Huide Wang,Karim Khan,Swelm Wageh,Ahmed A. Al-Ghamd,Ayesha Khan Tareen,Abdullah G. Al-Sehemi,Zhe Shi,Jing Xiao,Han Zhang

DOI: https://doi.org/10.3390/nano12132260

IF: 5.3

2022-07-01

Nanomaterials

Abstract:Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Chalcogenide Glass Waveguide-Integrated Black Phosphorus Mid-Infrared Photodetectors

Skylar Deckoff-Jones,Hongtao Lin,Derek Kita,Hanyu Zheng,Duanhui Li,Wei Zhang,Juejun Hu

DOI: https://doi.org/10.1088/2040-8986/aaadc5

IF: 2.1

2018-01-01

Journal of Optics

Abstract:Black phosphorus (BP) is a promising 2D material that has unique in-plane anisotropy and a 0.3 eV direct bandgap, making it an attractive material for mid-IR photodetectors. So far, waveguide integrated BP photodetectors have been limited to the near-IR on top of Si waveguides that are unable to account for BP’s crystalline orientation. In this work, we employ mid-IR transparent chalcogenide glass (ChG) both as a broadband mid-IR transparent waveguiding material to enable waveguide-integration of BP detectors, and as a passivation layer to prevent BP degradation during device processing as well as in ambient atmosphere post-fabrication. Our ChG-on-BP approach not only leads to the first demonstration of mid-IR waveguide-integrated BP detectors, but also allows us to fabricate devices along different crystalline axes of BP to investigate, for the first time, the impact of in-plane anisotropy on photoresponse of waveguide-integrated devices. The best device exhibits responsivity up to 40 mA W−1 and noise equivalent power as low as 30 pW Hz−1/2 at 2185 nm wavelength. We also found that photodetector responsivities changed by an order of magnitude with different BP orientations. This work validates BP as an effective photodetector material in the mid-IR, and demonstrates the power of the glass-on-2D-material platform for prototyping of 2D material photonic devices.
Black Phosphorus Mid-Infrared Photodetectors with High Gain

Qiushi Guo,Andreas Pospischil,Maruf Bhuiyan,Hao Jiang,He Tian,Damon Farmer,Bingchen Deng,Cheng Li,Shu-Jen Han,Han Wang,Qiangfei Xia,Tso-Ping Ma,Thomas Mueller,Fengnian Xia

DOI: https://doi.org/10.1021/acs.nanolett.6b01977

IF: 10.8

2016-01-01

Nano Letters

Abstract:Recently, black phosphorus (BP) has joined the two-dimensional material family as a promising candidate for photonic applications due to its moderate bandgap, high carrier mobility, and compatibility with a diverse range of substrates. Photodetectors are probably the most explored BP photonic devices, however, their unique potential compared with other layered materials in the mid-infrared wavelength range has not been revealed. Here, we demonstrate BP mid-infrared detectors at 3.39 μm with high internal gain, resulting in an external responsivity of 82 A/W. Noise measurements show that such BP photodetectors are capable of sensing mid-infrared light in the picowatt range. Moreover, the high photoresponse remains effective at kilohertz modulation frequencies, because of the fast carrier dynamics arising from BP's moderate bandgap. The high photoresponse at mid-infrared wavelengths and the large dynamic bandwidth, together with its unique polarization dependent response induced by low crystalline symmetry, can be coalesced to promise photonic applications such as chip-scale mid-infrared sensing and imaging at low light levels.
2D-Material-enabled Multifunctional Mid-Ir Optoelectronics

Skylar Deckoff-Jones,Yixiu Wang,Hongtao Lin,Wenzhuo Wu,Juejun Hu

DOI: https://doi.org/10.1117/12.2543619

2020-01-01

Abstract:New narrow-gap two-dimensional (2-D) semiconductors exemplified by black phosphorus and tellurene are promising material candidates for mid-IR optoelectronic devices. In particular, tellurene, atomically thin crystals of elemental tellurium, is an emerging narrow-gap 2-D semiconductor amenable to scalable solution-based synthesis and large-area deposition. It uniquely combines tunable bandgap energies, high carrier mobility, exceptionally large electro-optic activity, and superior chemical stability, making it a promising and versatile material platform for mid-infrared photonics. Here we discuss the design and experimental realization of integrated photonic devices based on tellurene and other 2-D semiconductors specifically for the mid-IR spectral regime based on a chalcogenide glass (ChG) photonic platform.
Whole LWIR Directional Thermal Emission Based on ENZ Thin Films

Yunbin Ying,Binze Ma,Jianbo Yu,Yun Huang,Pintu Ghosh,Weidong Shen,Min Qiu,Qiang Li

DOI: https://doi.org/10.1002/lpor.202200018

2022-01-01

LASER & PHOTONICS REVIEWS

Abstract:Long-wave infrared (LWIR) of 8-14 mu m is an imperative atmospheric transmission window for applications such as infrared detectors, radiative cooling, and infrared stealth. Attempts to manipulate thermal emission in the LWIR band consist of either directional emission but narrowband or LWIR emission but non-directional. Directional thermal emission covering the entire LWIR band has remained elusive, so far. Here, a whole LWIR directional thermal emitter is introduced consisting of top epsilon-near-zero (ENZ) films (SiO2/SiO/Al2O3), a dielectric gap (Ge), and bottom ENZ films (TiO2/Ta2O5) on a metal. The emitter exhibits high emissivity (>0.9) in p-polarization at specific directions (72 degrees-82 degrees) covering the entire 8-14 mu m atmospheric window. Additionally, infrared encryption information on the emitter can only be observed in p-polarization in the oblique direction. This approach introduces a new route toward simultaneous control of bandwidth and directionality of thermal emission and has inclusive applications such as infrared camouflage and energy management.
Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Pao Tai Lin,Vivek Singh,Jianfei Wang,Hongtao Lin,Juejun Hu,Kathleen Richardson,J. David Musgraves,Igor Luzinov,Joel Hensley,Lionel C. Kimerling,Anu Agarwal

DOI: https://doi.org/10.1364/ome.3.001474

2013-01-01

Optical Materials Express

Abstract:CMOS compatible mid-Infrared (mid-IR) microphotonics including (1) broadband SOUP (Silicon on Oxide Undercladding Pedestal) waveguides; and (2) mid-IR transparent chalcogenide glass (ChGs) waveguides monolithically integrated with a PbTe thin film photodetector; are demonstrated. Using a pedestal undercladding geometry we obtain an optical loss for our Si waveguide which is 10 dB/cm lower compared to other waveguides using planar SiO2 cladding at λ = 5 µm, and a fundamental mode is seen over a broad mid-IR spectral range. To realize a fully integrated mid-IR on-chip system, in parallel, we develop PbTe thin film detectors that can be deposited on various mid-IR platforms through a thermal evaporation technique, offering high photoresponsivity of 25 V/W from λ = 1 µm to 4 µm. The detector can be efficiently integrated, using a suitable spacer, to an underlying Chalcogenide glass (ChGs) waveguide. Our results of low loss waveguides and integrated thin film detectors enable Si-CMOS microphotonics for mid-IR applications.
Wide‐Wavelength Tunable Mid‐Infrared Lasing Based on Black Arsenic Phosphorus

Junrong Zhang,Maobin Xie,Yushuang Zhang,Junyong Wang,Xinchao Zhao,Cheng Chen,Quanlong Zhang,Meng Xia,Jie Li,Zhuo Dong,Yan Zhang,Zeqian Ren,Tong Liu,Anlian Pan,Shaowei Wang,Kai Zhang

DOI: https://doi.org/10.1002/adom.202300278

IF: 9

2023-04-28

Advanced Optical Materials

Abstract:Wide‐wavelength tunable mid‐infrared vertical cavity surface emitting lasers (VCSELs) integrated on silicon substrates are realized based on two‐dimensional black arsenic phosphorus (b‐AsxP1−x). The emission wavelength of the optically pumped laser device is demonstrated to be tuned from 3.42 to 4.65 μm at room temperature, which could be controlled by adjusting the alloy composition and thickness of the b‐AsxP1−x gain media. Mid‐infrared (MIR) semiconductor laser sources are essential for applications in gas detection, infrared imaging, and high‐speed free space optical communications. At present, the dynamic wavelength tunability of MIR lasers based on lead salt, antimonide, and quantum cascade lasers is limited and their compact size as well as heterogeneous integration are still challenging. Two‐dimensional (2D) materials, used as optical gain materials, have the flexible tunability and compatible van der Waals integrations—providing many new possibilities for constructing MIR laser sources of large tunability and high integration. Here, wide‐wavelength tunable MIR vertical cavity surface emitting lasers (VCSELs) integrated on silicon substrates are realized based on 2D black arsenic phosphorus (b‐AsxP1−x). The emission wavelength of the optically pumped laser device is demonstrated to be tuned from 3.42 to 4.65 μm at room temperature, which could be controlled by adjusting the alloy composition and thickness of the gain media b‐AsxP1−x. The tunable MIR VCSEL device would pave the way for further exploration of 2D materials‐based IR lasers working as on‐chip light sources.

materials science, multidisciplinary,optics
Mid-infrared Polarized Emission from Black Phosphorus Light-Emitting Diodes

Junjia Wang,Adrien Rousseau,Mei Yang,Tony Low,Sébastien Francoeur,Stéphane Kéna-Cohen

DOI: https://doi.org/10.1021/acs.nanolett.0c00581

IF: 10.8

2020-04-14

Nano Letters

Abstract:We demonstrate a mid-infrared light-emitting diode based on the 2D semiconductor black phosphorus (BP). The device is composed of a mechanically exfoliated BP/molybdenum disulfide heterojunction. Under forward bias, it emits polarized electroluminescence at λ = 3.68 μm, with room-temperature internal and external quantum efficiencies of ∼1% and ∼0.03%, respectively. In our structure, outcoupling losses are dominated by radiation toward the high refractive index substrate. The ability to tune the bandgap of BP and consequently its emission wavelength with layer number, strain, and electric field make these LEDs particularly attractive for heterointegration into mid-infrared photonic platforms.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Actively variable-spectrum optoelectronics with black phosphorus

Hyungjin Kim,Shiekh Zia Uddin,Der-Hsien Lien,Matthew Yeh,Nima Sefidmooye Azar,Sivacarendran Balendhran,Taehun Kim,Niharika Gupta,Yoonsoo Rho,Costas P. Grigoropoulos,Kenneth B. Crozier,Ali Javey

DOI: https://doi.org/10.1038/s41586-021-03701-1

IF: 64.8

2021-08-11

Nature

Abstract:Room-temperature optoelectronic devices that operate at short-wavelength and mid-wavelength infrared ranges (one to eight micrometres) can be used for numerous applications1,2,3,4,5. To achieve the range of operating wavelengths needed for a given application, a combination of materials with different bandgaps (for example, superlattices or heterostructures)6,7 or variations in the composition of semiconductor alloys during growth8,9 are used. However, these materials are complex to fabricate, and the operating range is fixed after fabrication. Although wide-range, active and reversible tunability of the operating wavelengths in optoelectronic devices after fabrication is a highly desirable feature, no such platform has been yet developed. Here we demonstrate high-performance room-temperature infrared optoelectronics with actively variable spectra by presenting black phosphorus as an ideal candidate. Enabled by the highly strain-sensitive nature of its bandgap, which varies from 0.22 to 0.53 electronvolts, we show a continuous and reversible tuning of the operating wavelengths in light-emitting diodes and photodetectors composed of black phosphorus. Furthermore, we leverage this platform to demonstrate multiplexed nondispersive infrared gas sensing, whereby multiple gases (for example, carbon dioxide, methane and water vapour) are detected using a single light source. With its active spectral tunability while also retaining high performance, our work bridges a technological gap, presenting a potential way of meeting different requirements for emission and detection spectra in optoelectronic applications.

multidisciplinary sciences
Mid-infrared semiconductor light sources, detectors and its applications

Yonggang Zhang,Yi Gu,Yaoyao Li,Aizhen Li,Kai Wang,Cheng Li,Haosibaiyin Li,Xiaojun Zhang

DOI: https://doi.org/10.3969/j.issn.1007-2276.2011.10.004

2011-01-01

Abstract:The optoelectronic devices in mid-infrared (2-25μm) band have important applications in gas detection, infrared remote sensing, infrared countermeasure, etc. Our efforts on the development of mid- infrared semiconductor light sources and photodetectors, including InP-base quantum cascade lasers, 2μm band antimonide quantum well lasers and InGaAs photovoltaic detectors with expansion length were reviewed. The high performance materials for those devices were based on our molecular beam epitaxy grown wafers. Pulse operation of mid-infrared distribution feedback quantum cascade lasers was achieved, and continuous wave operation of 2μm band antimonide multi quantum well lasers at 80°C was reached. The cut off wavelength of room temperature operation InGaAs photodetector was extended to 2.9μm. Those devices had been used for gas detection, etc.
Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus.

Hao Chen,Xun Ge,Yiming Wang,Qianqian Xu,Zhifeng Li,Xiaohao Zhou,Jiaming Hao,Weida Hu,Shengjuan Li,Xingjun Wang

DOI: https://doi.org/10.1021/acs.jpclett.3c00145

2023-01-01

Abstract:Strain engineering is a powerful tool that can modulate semiconductor device performance. Here, we demonstrate that the bandgap of thin film (similar to 40 nm) black phosphorus (bP) can be continuously tuned from 2.9 to 3.9 mu m by applying an in-plane uniaxial strain, as evidenced by mid-infrared photoluminescence (PL) spectroscopy. The deduced bandgap strain coefficients are similar to 103 meV %-1, which coincide with those obtained in few-layer bP. On the basis of first-principles calculations, the origin of the uniaxial tensile strain-induced PL enhancement is suggested to be due to the increase in both the effective mass ratio (me*/mh*) and the bandgap, leading to the increment of the radiative efficiency. Moreover, the mid-infrared PL emission remains perfectly linear-polarized along the armchair direction regardless of tensile or compressive strain. The highly tunable bandgap of bP in the mid-infrared regime opens up opportunities for the realization of mid-infrared light-emitting diodes and lasers using layered materials.

Mid-infrared light-emitting properties and devices based on thin-film black phosphorus

Widely tunable mid-infrared light emission in thin-film black phosphorus

Black Phosphorus for Mid-Infrared Optoelectronics: Photophysics, Scalable Processing, and Device Applications

Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications

Mid-infrared Black Phosphorus Surface-emitting Laser with an Open Micro-cavity

Zro2-Tio2 Thin Films and Resonators for Mid-Infrared Integrated Photonics

Wavelength-Tunable Mid-Infrared Lasing from Black Phosphorus Nanosheets

Mid-infrared Waveguide Integrated Chalcogenide Glass on Black Phosphorus Photodetectors

Black phosphorus van der Waals heterostructures light emitting diodes for mid-infrared silicon photonics

Bright Mid-Wave Infrared Resonant-Cavity Light-Emitting Diodes Based on Black Phosphorus

Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends

Chalcogenide Glass Waveguide-Integrated Black Phosphorus Mid-Infrared Photodetectors

Black Phosphorus Mid-Infrared Photodetectors with High Gain

2D-Material-enabled Multifunctional Mid-Ir Optoelectronics

Whole LWIR Directional Thermal Emission Based on ENZ Thin Films

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Wide‐Wavelength Tunable Mid‐Infrared Lasing Based on Black Arsenic Phosphorus

Mid-infrared Polarized Emission from Black Phosphorus Light-Emitting Diodes

Actively variable-spectrum optoelectronics with black phosphorus

Mid-infrared semiconductor light sources, detectors and its applications

Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus.