Abstract:Microresonator-based lasers are key light sources in photonic integrated circuits for future optical communication. Recently developed on-chip sensing makes microcavity lasers at mid-infrared wavelengths very appealing owing to the abundant absorption fingerprints in this spectral range (3–12 μm). As leading semiconductor mid-infrared laser sources, quantum cascade lasers are ideal candidates for on-chip sensing, and significant achievements have been made using deformed cavities for unidirectional emission. However, the much higher operating voltage and thermal load from the cascade scheme and the sidewall current leakage due to the thermally activated surface states make the continuous-wave operation of microcavity quantum cascade lasers rather challenging. Here, we designed a selective electrical isolation scheme for the specific region of the cavity and combined it with surface passivation. We experimentally demonstrated the first continuous-wave operation of microcavity quantum cascade lasers up to a temperature of 5 °C at an emission wavelength of 8 μm. This design significantly reduces the injection current while ensuring a low optical loss for the whispering-gallery mode with a high quality factor, thereby reducing the thermal dissipation power. It is worth noting that this design is applicable to a variety of whispering-gallery-mode resonators, especially large cavities, which greatly develops the potential of microcavity quantum cascade lasers as continuous-wave mid-infrared light sources for photonic integrated circuits and microcavity physics.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsphotonics.1c01437.(i) Finite element simulation of mode distribution and thermal performance and (ii) accuracy analysis of the finite element model (PDF)This article has not yet been cited by other publications.

Continuous-wave operation of ultra-short cavity distributed bragg reflector lasers on Si substrates

Low-power-consumption modulation of short-cavity DBR laser on SiO2/Si substrate

Silicon Reflectors for External Cavity Lasers Based on Ring Resonators

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Short Cavity DBR Laser Using Vertical Groove Gratings for Large-Scale Photonic Integrated Circuits

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

A Novel Short-Cavity Laser with Deep-Grating Distributed Bragg Reflectors

Continuous-Wave Operation of Microcavity Quantum Cascade Lasers in Whispering-Gallery Mode

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities

Low voltage driving coupled-cavity electro-optically Q-switched microchip lasers

High wall-plug efficiency and narrow linewidth III-V-on-silicon C-band DFB laser diodes

Hertz-linewidth and frequency-agile photonic integrated extended-DBR lasers

Practical Multisegment Composite-Cavity Semiconductor Lasers

Continuous-wave operation and 10-Gb/s direct modulation of InAsP/InP sub-wavelength nanowire laser on silicon photonic crystal

Continuous-wave operation of 1550 nm low-threshold triple-lattice photonic-crystal surface-emitting lasers

High-power, low-noise Brillouin laser on a silicon chip

Electrically‐Driven Photonic Crystal Lasers with Ultra‐low Threshold

Short-cavity DBR laser using an InP/InGaAsP deep-ridge waveguide with vertical-groove gratings

4–λ hybrid InGaAsP-Si evanescent laser array with low power consumption for on-chip optical interconnects

Short-coupled-cavity Single-Mode Semiconductor Lasers