Abstract:Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core-shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode, a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality. Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry-Pérot cavity between the top nanowire facet and bottom nanowire/SiO2 mask interface, stimulated emissions of the EH11a/b mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of ~28.2 μJ cm-2 per pulse and a high characteristic temperature of ~128 K. By fine-tuning the In composition of the quantum wells, room temperature, single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range, spanning from 940 nm to the telecommunication O and C bands. Our research indicates that through a carefully designed facet engineering strategy, highly ordered, uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate, paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.

Continuous-wave operation and 10-Gb/s direct modulation of InAsP/InP sub-wavelength nanowire laser on silicon photonic crystal

Integrated Dual-DFB Laser for 408 GHz Carrier Generation Enabling 131 Gbit/s Wireless Transmission over 10.7 Meters.

Continuous Wave Mid‐Infrared Lasing from Single InAs Nanowires Grown on Silicon

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Fiber-Integrated Reversibly Wavelength-Tunable Nanowire Laser Based on Nanocavity Mode Coupling.

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Nonlinear-Optic Silicon-Nanowire Waveguides

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

InAs-Nanowire-Based Broadband Ultrafast Optical Switch.

Self-phase Modulation in Single CdTe Nanowires

Optical Signal Processing In Silicon Nano-Waveguides

Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays

On-chip single-mode CdS nanowire laser

Compact Tunable Laser with InGaAsP Photonic Crystal Nanorods for C-Band Communication

Monolithic Quantum Dot Discrete Mode Laser on SOI

An electrically-driven Carbon nanotube-based plasmonic laser on Silicon

Tunable Wavelength Conversion by XPM in a Silicon Nanowire, and the Potential for XPM-Multicasting

Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon‐on‐Insulator for Photonic Crystal Surface‐Emitting Lasers

Transfer-printed quantum-dot nanolasers on a silicon photonic circuit

Continuous-wave operation of electrically pumped, single-mode, edge-emitting photonic crystal Bragg lasers